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MMBD4448DW-13 PDF预览

MMBD4448DW-13

更新时间: 2024-11-18 20:06:11
品牌 Logo 应用领域
美台 - DIODES 光电二极管
页数 文件大小 规格书
3页 316K
描述
Rectifier Diode, 2 Element, 0.25A, 75V V(RRM), Silicon, ULTRA MINIATURE, PLASTIC PACKAGE-6

MMBD4448DW-13 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete包装说明:ULTRA MINIATURE, PLASTIC PACKAGE-6
针数:6Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.31配置:SEPARATE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PDSO-G6JESD-609代码:e0
湿度敏感等级:1元件数量:2
端子数量:6最高工作温度:150 °C
最低工作温度:-65 °C最大输出电流:0.25 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):235
最大功率耗散:0.2 W认证状态:Not Qualified
最大重复峰值反向电压:75 V最大反向恢复时间:0.004 µs
表面贴装:YES端子面层:Tin/Lead (Sn85Pb15)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:10Base Number Matches:1

MMBD4448DW-13 数据手册

 浏览型号MMBD4448DW-13的Datasheet PDF文件第2页浏览型号MMBD4448DW-13的Datasheet PDF文件第3页 
MMBD4448DW  
SURFACE MOUNT SWITCHING DIODE  
Features  
·
Fast Switching Speed  
A
SOT-363  
Min  
·
Surface Mount Package Ideally Suited for  
Automatic Insertion  
Dim  
A
B
C
D
F
Max  
0.30  
1.35  
2.20  
B
C
·
·
·
For General Purpose Switching Applications  
High Conductance  
Ultra Miniature Package  
0.10  
1.15  
G
H
2.00  
0.65 Nominal  
Mechanical Data  
K
M
0.30  
1.80  
¾
0.40  
2.20  
0.10  
1.00  
0.40  
0.25  
8°  
·
Case: SOT-363, Molded Plastic  
Case material - UL Flammability Rating  
Classification 94V-0  
Moisture sensitivity: Level 1 per J-STD-020A  
Terminals: Solderable per MIL-STD-202,  
Method 208  
Polarity: See Diagram  
Marking: KA3 (See Page 3)  
Weight: 0.006 grams (approx.)  
H
J
·
J
L
D
F
·
·
K
L
0.90  
0.25  
0.10  
0°  
NC  
C1  
A2  
KA3  
M
a
·
·
·
A1  
C2  
NC  
All Dimensions in mm  
TOP VIEW  
@ T = 25°C unless otherwise specified  
Maximum Ratings  
A
Characteristic  
Symbol  
Value  
Unit  
VRM  
Non-Repetitive Peak Reverse Voltage  
100  
V
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
75  
VR(RMS)  
IFM  
RMS Reverse Voltage  
53  
V
Forward Continuous Current (Note 1)  
Average Rectified Output Current (Note 1)  
Non-Repetitive Peak Forward Surge Current  
500  
250  
mA  
mA  
IO  
@ t < 1ms  
@ t < 1s  
4
2
IFSM  
Pd  
A
Power Dissipation (Note 1)  
200  
625  
mW  
°C/W  
°C  
R
qJA  
Thermal Resistance Junction to Ambient Air (Note 1)  
Operating and Storage Temperature Range  
Tj , TSTG  
-65 to +150  
Electrical Characteristics @ T = 25°C unless otherwise specified  
A
Characteristic  
Symbol  
Min  
Max  
¾
Unit  
Test Condition  
V(BR)R  
Reverse Breakdown Voltage (Note 2)  
IR = 10mA  
75  
V
0.62  
¾
¾
¾
0.720  
IF = 5.0mA  
IF = 10mA  
IF = 50mA  
IF = 150mA  
0.855  
VF  
Forward Voltage (Note 2)  
Reverse Current (Note 2)  
V
1.0  
1.25  
VR = 75V  
2.5  
50  
30  
25  
mA  
mA  
mA  
nA  
VR = 75V, Tj = 150°C  
VR = 25V, Tj = 150°C  
VR = 20V  
IR  
¾
VR = 0, f = 1.0MHz  
CT  
trr  
Total Capacitance  
¾
¾
4.0  
4.0  
pF  
ns  
IF = IR = 10mA,  
Irr = 0.1 x IR, RL = 100W  
Reverse Recovery Time  
Notes:  
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout  
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
2. Short duration test pulse used to minimize self-heating.  
DS31035 Rev. 3 - 2  
1 of 3  
MMBD4448DW  
www.diodes.com  
ã Diodes Incorporated  

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