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MMBD4448DW PDF预览

MMBD4448DW

更新时间: 2024-11-19 14:54:47
品牌 Logo 应用领域
江苏长电/长晶 - CJ /
页数 文件大小 规格书
4页 1637K
描述
SOT-363

MMBD4448DW 技术参数

生命周期:Contact ManufacturerReach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.58
Is Samacsys:NBase Number Matches:1

MMBD4448DW 数据手册

 浏览型号MMBD4448DW的Datasheet PDF文件第2页浏览型号MMBD4448DW的Datasheet PDF文件第3页浏览型号MMBD4448DW的Datasheet PDF文件第4页 
GSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD  
SOT-363 Plastic-Encapsulate Diodes  
MMBD4448DW Switching Diode  
SOT-363  
FEATURES  
z
z
z
z
Fast Switching Speed  
Ultra-Small Surface Mount Package  
For General Purpose Switching Applications  
High Conductance Power Dissipation  
6
1
5
2
4
3
MARKING:KA3  
NC  
Soliddot = Pin1 indicate.  
Soliddot = Green molding compound device.  
KA3  
NC  
Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25  
Parameter  
Symbol  
VRM  
Limit  
Unit  
Non-Repetitive Peak Reverse Voltage  
Peak Repetitive Peak Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
100  
V
VRRM  
VRWM  
VR  
75  
V
RMS Reverse Voltage  
VR(RMS)  
IFM  
53  
V
Forward Continuous Current  
Average Rectified Output Current  
500  
250  
mA  
mA  
IO  
Non-Repetitive PeakForward Surge Current @t=8.3ms  
IFSM  
A
2.0  
Power Dissipation  
mW  
Pd  
200  
RθJA  
Thermal Resistance from Junction to Ambient  
Operation Junction and Storage Temperature Range  
625  
/W  
TJ,TSTG  
-55 ~+150  
Electrical Ratings @Ta=25  
Parameter  
Symbol  
V (BR)R  
VF1  
Min  
75  
Typ  
Max  
Unit  
Conditions  
IR=10μA  
IF=5mA  
Reverse Breakdown Voltage  
V
V
0.62  
0.72  
0.855  
1.0  
VF2  
V
IF=10mA  
IF=50mA  
IF=150mA  
VR=75V  
Forward Voltage  
Reverse Current  
VF3  
V
VF4  
1.25  
2.5  
V
IR1  
μA  
nA  
pF  
IR2  
25  
VR=20V  
Capacitance Between Terminals  
CT  
4
VR=0V,f=1MHz  
IF=IR=10mA  
Reverse Recovery Time  
trr  
4
ns  
Irr=0.1XIR,RL=100Ω  
www.jscj-elec.com  
1
Rev. - 2.1  

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