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MMBD4448-TP PDF预览

MMBD4448-TP

更新时间: 2024-11-18 12:57:55
品牌 Logo 应用领域
美微科 - MCC 二极管开关
页数 文件大小 规格书
4页 181K
描述
Rectifier Diode, 1 Element, 0.25A, 75V V(RRM), Silicon, PLASTIC PACKAGE-3

MMBD4448-TP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:PLASTIC PACKAGE-3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:0.98配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:0.25 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
最大功率耗散:0.35 W认证状态:Not Qualified
最大重复峰值反向电压:75 V最大反向恢复时间:0.004 µs
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:10Base Number Matches:1

MMBD4448-TP 数据手册

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M C C  
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TM  
MMBD4448  
Micro Commercial Components  
Features  
Surface Mount  
Fast Switching Speed  
Switching Diode  
350mW  
Surface Mount Package Ideally Suited for Automatic Insertion  
For General Purpose Switching Applications  
Lead Free Finish/Rohs Compliant ("P"Suffix designates  
RoHS Compliant. See ordering information)  
Mechanical Data  
Epoxy meets UL 94 V-0 flammability rating  
SOT-23  
Moisture Sensitivity Level 1  
Polarity: See Diagram  
A
D
Marking: KA3  
B
C
Maximum Ratings @ 25oC Unless Otherwise Specified  
Characteristic  
Symbol  
VRM  
Value  
100  
Unit  
V
F
E
Non-Repetitive Peak Reverse Volt.  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
75  
V
H
G
J
RMS Reverse Voltage  
VR(RMS)  
IFM  
53  
V
mA  
mA  
A
Forward Continuous Current(Note1)  
Average Rectified Output Current  
Non-Repetitive Peak @ t<=1.0s  
Forward Surge Current @ t=1.0us  
Power Dissipation(Note 1)  
500  
DIMENSIONS  
MM  
Io  
250  
INCHES  
MIN  
DIM  
A
B
C
D
E
MAX  
.120  
.098  
.055  
.041  
.081  
.024  
.0039  
.044  
.007  
.020  
MIN  
2.80  
2.10  
1.20  
.89  
1.78  
.45  
.013  
.89  
MAX  
3.04  
2.64  
1.40  
1.03  
2.05  
.60  
NOTE  
IFSM  
2
4
.110  
.083  
.047  
.035  
.070  
.018  
.0005  
.035  
.003  
.015  
A
Pd  
R
350  
mW  
K/W  
oC  
Thermal Resistance(Note 1)  
Operation/Storage Temp. Range  
357  
F
G
H
J
.100  
1.12  
.180  
.51  
Tj, TSTG  
-55 to +150  
.085  
.37  
Electrical Characteristics @ 25oC Unless Otherwise Specified  
K
Suggested Solder  
Pad Layout  
.031  
.800  
Charateristic  
Symbol Min  
Max  
Unit  
Test Cond.  
IF=5.0mA  
IF=10mA  
0.62 0.72  
Maximum Forward  
Voltage Drop  
VFM  
----- 0.855  
V
1
IF=100mA  
IF=150mA  
VR=75V  
.035  
.900  
1.25  
2.5  
.079  
2.000  
inches  
mm  
uA  
Maximum Peak  
Reverse Current  
IRM  
-----  
50  
30  
25  
4
uA VR=75V Tj=150oC  
uA VR=25V Tj=150oC  
nA  
VR=20V  
.037  
.950  
Junction Capacitance  
Cj  
trr  
-----  
-----  
pF VR=0V, f=1.0MHz  
ns  
.037  
.950  
Reverse Recovery Time  
4
Note: 1. Valid provided that terminals are kept at ambient temperature  
2. Trr Test Condition: IF=IR=10mA, Irr=0.1*IR, R=100 OHM  
www.mccsemi.com  
1 of 4  
Revision: A  
2011/01/01  

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