Datasheet > MMBD4448V

MMBD4448V

更新时间： 2024-11-21 10:52:47

品牌	Logo	应用领域
金誉半导体 - HTSEMI		二极管开关
页数	文件大小	规格书
2页	508K
描述
SWITCHING DIODE

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中文翻译

获取价格

数据手册

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MMBD4448V 数据手册

MMBD4448V

SWITCHING DIODE

SOT-563

FEATURES

Fast switching speed

High conductance

MARKING: KAL

Maximum Ratings @T_A=25℃

Parameter

Symbol

V_RM

Limits

100

Unit

Non-Repetitive Peak reverse voltage

RMS Reverse Voltage

V_R(RMS)

V_RRM

V_RWM

V_R

Peak Repetitive Peak reverse voltage

Working Peak Reverse Voltage

DC Blocking

Voltage

Forward Continuous Current

Average Rectified Output Current

Peak forward surge current @=1.0μs

@=1.0s

I_FM

500

250

4.0

I_O

I_FSM

1.5

Power Dissipation

150

833

K/W

℃

Thermal Resistance Junction to

Ambient

R_θJA

T_STG

Storage temperature

-65 to +150

Electrical Ratings @T_A=25℃

Parameter

Symbol

V_(BR)R

V_F1

Min.

0.62

Typ.

Max. Unit

Conditions

I_R=2.5μA

I_F=5mA

Reverse Breakdown Voltage

0.72

0.855

1.0

V_F2

I_F=10mA

I_F=100mA

I_F=150mA

V_R=70V

Forward voltage

V_F3

1.25

0.1

V_F4

I_R1

μA

Reverse current

I_R2

V_R=20V

3.5

Capacitance between terminals

Reverse Recovery Time

C_T

V_R=6V,f=1MHz

V_R=6V, I_F=5mA

t_rr

JinYu

semiconductor

www.htsemi.com

Date:2011/05

中文翻译

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