Datasheet > MMBD4448WT_11

MMBD4448WT_11

更新时间： 2024-11-25 10:52:47

品牌	Logo	应用领域
美微科 - MCC		二极管开关
页数	文件大小	规格书
4页	178K
描述
Surface Mount Switching Diode 200mW

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中文翻译

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MMBD4448WT_11 数据手册

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

MMBD4448WT

Micro Commercial Components

Features

ꢀ Fast Switching Speed

Surface Mount

Switching Diode

200mW

ꢀ Surface Mount Package Ideally Suited for Automatic Insertion

ꢀ For General Purpose Switching Applications

ꢀ High Conductance

ꢀ Epoxy meets UL 94 V-0 flammability rating

ꢀ Moisture Sensitivity Level 1

ꢀ Lead Free Finish/Rohs Compliant ("P"Suffix designates

RoHS Compliant. See ordering information)

SOT-323

Mechanical Data

ꢀ Polarity: See Diagram

ꢀ Marking: KA3

Maximum Ratings @ 25^oC Unless Otherwise Specified

Characteristic

Symbol

V_RM

Value

100

Unit

Non-Repetitive Peak Reverse Volt.

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

VRWM

V^R

DIMENSIONS

INCHES

RMS Reverse Voltage

VR(RMS)

I_FM

DIM

MIN

.079

.045

.085

MAX

.087

.053

.096

MIN

2.00

1.15

2.15

MAX

2.20

1.35

2.45

NOTE

Forward Continuous Current(Note1)

Average Rectified Output Current

Non-Repetitive Peak @ t<=1.0s

Forward Surge Current @ t=1.0us

Power Dissipation(Note 1)

500

250

.026 Nominal

0.65Nominal

1.20

.30

.000

.90

.08

I^FSM

.047

.055

.016

.004

.039

.006

.016

1.40

.40

.100

1.00

.15

.012

.000

.035

.003

.008

200

K/W

^oC

Thermal Resistance(Note 1)

Operation/Storage Temp. Range

Rthja

625

.20

.40

Tj, T^STG

-55 to +150

Suggested Solder

Pad Layout

0.70

Electrical Characteristics @ 25^oC Unless Otherwise Specified

Charateristic

Symbol Min

Max

Unit

Test Cond.

I_F=5.0mA

IF=10mA

0.90

0.62 0.72

Maximum Forward

Voltage Drop

V^FM

----- 0.855

1.90

I^F=100mA

I^F=150mA

V^R=75V

1.25

2.5

0.65

Maximum Peak

Reverse Current

I^RM

-----

uA VR=75V Tj=150^oC

uA V^R=25V Tj=150^oC

0.65

V^R=20V

Junction Capacitance

t^rr

-----

pF V^R=0V, f=1.0MHz

Reverse Recovery Time

Note: 1. Valid provided that terminals are kept at ambient temperature

2. Trr Test Condition: IF=IR=10mA, Irr=0.1*IR, R=100 OHM

www.mccsemi.com

1 of 4

Revision: A

2011/01/01

12 3 4

中文翻译

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与MMBD4448WT_11相关器件

型号	品牌	获取价格	描述	数据表
MMBD4448W-T1	WTE	获取价格	SURFACE MOUNT FAST SWITCHING DIODE
MMBD4448W-T3	WTE	获取价格	SURFACE MOUNT FAST SWITCHING DIODE
MMBD4448WTP	MCC	获取价格	DIODE 0.5 A, 75 V, SILICON, SIGNAL DIODE, PLASTIC PACKAGE-3, Signal Diode
MMBD4448WT-T	MCC	获取价格	Rectifier Diode,
MMBD4448WT-TP	MCC	获取价格	Rectifier Diode, 1 Element, 0.5A, 4V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, SOT-363, 6
MMBD4448WT-TP-HF	MCC	获取价格	Rectifier Diode, 1 Element, 0.25A, 75V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT, P
MMBD4448Z	SECOS	获取价格	0.25A , 100V Plastic-Encapsulated Switching Diode
MMBD451LT1	MOTOROLA	获取价格	Schottky Barrier Diodes
MMBD452	PANJIT	获取价格	SURFACE MOUNT SCHOTTKY DIODE
MMBD452	LGE	获取价格	Dual Hot Carrier Mixer Diodes

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