Datasheet > MMBD452LT1_06

MMBD452LT1_06

更新时间： 2024-11-27 04:39:31

品牌	Logo	应用领域
安森美 - ONSEMI		二极管
页数	文件大小	规格书
3页	54K
描述
Dual Hot−Carrier Diodes Schottky Barrier Diodes

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中文翻译

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MMBD452LT1_06 数据手册

MMBD452LT1

Preferred Device

Dual Hot−Carrier Diodes

Schottky Barrier Diodes

These devices are designed primarily for high−efficiency UHF and

VHF detector applications. They are readily adaptable to many other

fast switching RF and digital applications. They are supplied in an

inexpensive plastic package for low−cost, high−volume consumer

and industrial/commercial requirements.

http://onsemi.com

30 VOLTS

DUAL HOT−CARRIER

DETECTOR AND SWITCHING

DIODES

Features

• Extremely Low Minority Carrier Lifetime

• Very Low Capacitance

• Low Reverse Leakage

• Pb−Free Package is Available

ANODE

CATHODE

MAXIMUM RATINGS (T = 125°C unless otherwise noted)

Rating

Symbol

Value

Unit

CATHODE/ANODE

Reverse Voltage

Forward Power Dissipation

@ T = 25°C

225

1.8

mW/°C

SOT−23 (TO−236)

CASE 318

Derate above 25°C

STYLE 11

Operating Junction Temperature Range

Storage Temperature Range

−55 to +125

−55 to +150

°C

stg

Maximum ratings are those values beyond which device damage can occur.

Maximumratings applied to the device are individual stress limit values (not normal

operating conditions) and are not valid simultaneously. If these limits are exceeded,

device functional operation is not implied, damage may occur and reliability may

be affected.

MARKING DIAGRAM

5N M G

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

(EACH DIODE)

Characteristic

Symbol Min Typ Max

Unit

Reverse Breakdown Voltage

(BR)R

−

(I = 10 mA)

5N = Device Code

= Date Code*

= Pb−Free Package

Total Capacitance

−

0.9

1.5

200

nAdc

Vdc

(V = 15 V, f = 1.0 MHz) Figure 1

(Note: Microdot may be in either location)

Reverse Leakage

−

*Date Code orientation and/or overbar may vary

dependingupon manufacturing location.

(V = 25 V) Figure 3

Forward Voltage

−

0.38 0.45

0.52 0.6

(I = 1.0 mAdc) Figure 4

ORDERING INFORMATION

Forward Voltage

−

†

Device

Package

Shipping

(I = 10 mAdc) Figure 4

MMBD452LT1

SOT−23 3,000 / Tape & Reel

MMBD452LT1G

SOT−23 3,000 / Tape & Reel

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Preferred devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 2006

Publication Order Number:

February, 2006 − Rev. 3

MMBD452LT1/D

12 3

中文翻译

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与MMBD452LT1_06相关器件

型号	品牌	获取价格	描述	数据表
MMBD452LT1G	ONSEMI	获取价格	Dual Hot−Carrier Diodes Schottky Barrier Diodes
MMBD452LT1G_09	ONSEMI	获取价格	Dual Hot-Carrier Diodes Schottky Barrier Diodes
MMBD452LT3	ONSEMI	获取价格	DIODE SILICON, VHF-UHF BAND, MIXER DIODE, TO-236AB, CASE 318-08, 3 PIN, Microwave Mixer Di
MMBD495A	PANJIT	获取价格	SURFACE MOUNT SCHOTTKY BARRIER
MMBD495C	PANJIT	获取价格	SURFACE MOUNT SCHOTTKY BARRIER
MMBD495S	PANJIT	获取价格	SURFACE MOUNT SCHOTTKY BARRIER
MMBD4SDW	SWST	获取价格	小信号开关二极管
MMBD4SDW-AH	SWST	获取价格	小信号开关二极管
MMBD5004A-7	DIODES	获取价格	Rectifier Diode, 2 Element, 0.3A, 400V V(RRM), Silicon, GREEN, PLASTIC PACKAGE-3
MMBD5004BRM	DIODES	获取价格	HIGH VOLTAGE SURFACE MOUNT SWITCHING DIODE ARRAY

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