Datasheet > MMBD452LT1G_09

MMBD452LT1G_09

更新时间： 2024-09-23 05:49:19

品牌	Logo	应用领域
安森美 - ONSEMI		二极管
页数	文件大小	规格书
3页	114K
描述
Dual Hot-Carrier Diodes Schottky Barrier Diodes

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MMBD452LT1G_09 数据手册

MMBD452LT1G

Dual Hot-Carrier Diodes

Schottky Barrier Diodes

These devices are designed primarily for high−efficiency UHF and

VHF detector applications. They are readily adaptable to many other

fast switching RF and digital applications. They are supplied in an

inexpensive plastic package for low−cost, high−volume consumer

and industrial/commercial requirements.

http://onsemi.com

30 VOLTS

DUAL HOT−CARRIER

DETECTOR AND SWITCHING

DIODES

Features

• Extremely Low Minority Carrier Lifetime

• Very Low Capacitance

• Low Reverse Leakage

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

ANODE

CATHODE

MAXIMUM RATINGS (T = 125°C unless otherwise noted)

CATHODE/ANODE

Rating

Symbol

Value

Unit

Reverse Voltage

Forward Power Dissipation

SOT−23 (TO−236)

CASE 318

@ T = 25°C

225

1.8

Derate above 25°C

mW/°C

STYLE 11

Operating Junction Temperature Range

Storage Temperature Range

−55 to +125

−55 to +150

°C

stg

MARKING DIAGRAM

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

RecommendedOperating Conditions may affect device reliability.

5N M G

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

(EACH DIODE)

5N = Device Code

= Date Code*

= Pb−Free Package

Characteristic

Symbol Min Typ Max

Unit

Reverse Breakdown Voltage

(BR)R

−

(Note: Microdot may be in either location)

(I = 10 mA)

*Date Code orientation and/or overbar may vary

dependingupon manufacturing location.

Total Capacitance

−

0.9

1.5

200

nAdc

Vdc

(V = 15 V, f = 1.0 MHz) Figure 1

Reverse Leakage

−

ORDERING INFORMATION

(V = 25 V) Figure 3

†

Device

Package

Shipping

Forward Voltage

−

0.38 0.45

0.52 0.6

MMBD452LT1G

SOT−23 3,000 / Tape & Reel

(Pb−Free)

(I = 1.0 mAdc) Figure 4

Forward Voltage

−

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

(I = 10 mAdc) Figure 4

Semiconductor Components Industries, LLC, 2009

Publication Order Number:

August, 2009 − Rev. 4

MMBD452LT1/D

12 3

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