Datasheet > MMBD5004BRM

MMBD5004BRM

更新时间： 2024-11-25 05:49:19

品牌	Logo	应用领域
美台 - DIODES		二极管开关高压
页数	文件大小	规格书
5页	103K
描述
HIGH VOLTAGE SURFACE MOUNT SWITCHING DIODE ARRAY

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中文翻译

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MMBD5004BRM 数据手册

MMBD5004BRM

HIGH VOLTAGE SURFACE MOUNT SWITCHING DIODE ARRAY

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Features

Mechanical Data

•

Two Series Diode Circuits Connect to Form Full Wave Bridge

Fast Switching Speed

Low Capacitance

400V Reverse Breakdown Voltage Rating

Lead Free/RoHS Compliant Version (Note 3)

"Green" Device (Note 4)

•

Case: SOT-26

Case Material: Molded Plastic, "Green" Molding Compound,

Note 4. UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Matte Tin Finish annealed over Copper leadframe

(Lead Free Plating). Solderable per MIL-STD-202, Method 208

Polarity: See Diagram

Marking Information: See Page 2

Ordering Information: See Page 2

Weight: 0.016 grams (approximate)

•

SOT-26

C₁

C₂

A₁

A₂

TOP VIEW

Internal Schematic

TOP VIEW

Maximum Ratings @T = 25°C unless otherwise specified

Characteristic

Repetitive Peak Reverse Voltage

Symbol

V_RRM

V_RWM

V_R

Value

400

Unit

Working Peak Reverse Voltage

DC Blocking Voltage

350

RMS Reverse Voltage

247

225

625

V_R(RMS)

I_F

Forward Continuous Current

Peak Repetitive Forward Current

I_FRM

Non-Repetitive Peak Forward Surge Current

@ t = 1.0ms

@ t = 1.0s

2.0

1.0

I_FSM

Thermal Characteristics

Characteristic

Power Dissipation (Note 1)

Symbol

P_D

Value

350

Unit

°C/W

°C

Thermal Resistance Junction to Ambient Air (Note 1)

Operating and Storage Temperature Range

357

R_θ

-65 to +150

T_J,T_STG

Electrical Characteristics @T = 25°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Reverse Breakdown Voltage (Note 2)

400

V_(BR)R

⎯

I_R= 150μA

I_F= 20mA

I_F= 100mA

I_F= 200mA

⎯

0.87

1.0

1.25

Forward Voltage

V_F

⎯

_R= 240V

_R= 240V, T_J= 150°C

_R= 360V

μA

100

⎯

Reverse Current (Note 2)

I_R

⎯

Total Capacitance

0.7

2.0

C_T

t_rr

⎯

V_R= 0V, f = 1.0MHz

I_F= I_R= 30mA,

I_rr= 3.0mA, R_L= 100Ω

Reverse Recovery Time

⎯

Notes:

1. Part mounted on polyimide substrate PC board with recommended pad layout, which can be found on our website at

http://www.diodes.com/datasheets/ap02001.pdf.

2. Short duration pulse test used to minimize self-heating effect.

3. No purposefully added lead.

4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

1 of 5

www.diodes.com

December 2009

MMBD5004BRM

Document number: DS30714 Rev. 4 - 2

12 3 4 5

中文翻译

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与MMBD5004BRM相关器件

型号	品牌	获取价格	描述	数据表
MMBD5004BRM-7	DIODES	获取价格	HIGH VOLTAGE SURFACE MOUNT SWITCHING DIODE ARRAY
MMBD5004C-7	DIODES	获取价格	Rectifier Diode, 2 Element, 0.3A, 400V V(RRM), Silicon, GREEN, PLASTIC PACKAGE-3
MMBD5004S	DIODES	获取价格	HIGH VOLTAGE DUAL SWITCHING DIODE
MMBD5004S	RECTRON	获取价格	Reverse Voltage Vr : 400 V;Forward Current Io : 300 mA;Max Surge Current : 5.0 A;Forward V
MMBD5004S-7	DIODES	获取价格	HIGH VOLTAGE DUAL SWITCHING DIODE
MMBD501	MOTOROLA	获取价格	Rectifier Diode, Schottky, 1 Element,
MMBD501	ONSEMI	获取价格	DIODE SILICON, UHF BAND, MIXER DIODE, TO-236AA, CASE 318-02, 3 PIN, Microwave Mixer Diode
MMBD50BRD	SWST	获取价格	小信号开关二极管
MMBD5148	SECOS	获取价格	Surface Mount Switching Diode
MMBD5148A	SECOS	获取价格	Surface Mount Switching Diode

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