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MMBD5004BRM-7 PDF预览

MMBD5004BRM-7

更新时间: 2024-11-27 05:49:19
品牌 Logo 应用领域
美台 - DIODES 整流二极管开关测试光电二极管高压
页数 文件大小 规格书
5页 103K
描述
HIGH VOLTAGE SURFACE MOUNT SWITCHING DIODE ARRAY

MMBD5004BRM-7 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:GREEN, PLASTIC PACKAGE-6
针数:6Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
Factory Lead Time:19 weeks风险等级:1.64
Is Samacsys:N配置:2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.87 VJESD-30 代码:R-PDSO-G6
JESD-609代码:e3湿度敏感等级:1
元件数量:4端子数量:6
最高工作温度:150 °C最低工作温度:-65 °C
最大输出电流:0.225 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260最大功率耗散:0.35 W
认证状态:Not Qualified最大重复峰值反向电压:400 V
最大反向电流:100 µA最大反向恢复时间:0.05 µs
反向测试电压:240 V子类别:Signal Diodes
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40Base Number Matches:1

MMBD5004BRM-7 数据手册

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MMBD5004BRM  
HIGH VOLTAGE SURFACE MOUNT SWITCHING DIODE ARRAY  
Please click here to visit our online spice models database.  
Features  
Mechanical Data  
Two Series Diode Circuits Connect to Form Full Wave Bridge  
Fast Switching Speed  
Low Capacitance  
400V Reverse Breakdown Voltage Rating  
Lead Free/RoHS Compliant Version (Note 3)  
"Green" Device (Note 4)  
Case: SOT-26  
Case Material: Molded Plastic, "Green" Molding Compound,  
Note 4. UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020  
Terminals: Matte Tin Finish annealed over Copper leadframe  
(Lead Free Plating). Solderable per MIL-STD-202, Method 208  
Polarity: See Diagram  
Marking Information: See Page 2  
Ordering Information: See Page 2  
Weight: 0.016 grams (approximate)  
SOT-26  
AC  
1
C1  
C2  
AC  
2
A1  
A2  
TOP VIEW  
Internal Schematic  
TOP VIEW  
Maximum Ratings @T = 25°C unless otherwise specified  
A
Characteristic  
Repetitive Peak Reverse Voltage  
Symbol  
VRRM  
VRWM  
VR  
Value  
400  
Unit  
V
Working Peak Reverse Voltage  
DC Blocking Voltage  
350  
V
RMS Reverse Voltage  
247  
225  
625  
V
VR(RMS)  
IF  
Forward Continuous Current  
Peak Repetitive Forward Current  
mA  
mA  
IFRM  
Non-Repetitive Peak Forward Surge Current  
@ t = 1.0ms  
@ t = 1.0s  
2.0  
1.0  
A
IFSM  
Thermal Characteristics  
Characteristic  
Power Dissipation (Note 1)  
Symbol  
PD  
Value  
350  
Unit  
mW  
°C/W  
°C  
Thermal Resistance Junction to Ambient Air (Note 1)  
Operating and Storage Temperature Range  
357  
Rθ  
JA  
-65 to +150  
TJ,TSTG  
Electrical Characteristics @T = 25°C unless otherwise specified  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
Test Condition  
Reverse Breakdown Voltage (Note 2)  
400  
V
V(BR)R  
IR = 150μA  
IF = 20mA  
IF = 100mA  
IF = 200mA  
0.87  
1.0  
1.25  
Forward Voltage  
V
VF  
V
V
V
R = 240V  
R = 240V, TJ = 150°C  
R = 360V  
nA  
μA  
μA  
100  
100  
5
Reverse Current (Note 2)  
IR  
Total Capacitance  
0.7  
2.0  
50  
pF  
CT  
trr  
VR = 0V, f = 1.0MHz  
IF = IR = 30mA,  
Irr = 3.0mA, RL = 100Ω  
Reverse Recovery Time  
ns  
Notes:  
1. Part mounted on polyimide substrate PC board with recommended pad layout, which can be found on our website at  
http://www.diodes.com/datasheets/ap02001.pdf.  
2. Short duration pulse test used to minimize self-heating effect.  
3. No purposefully added lead.  
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
1 of 5  
www.diodes.com  
December 2009  
© Diodes Incorporated  
MMBD5004BRM  
Document number: DS30714 Rev. 4 - 2  

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