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MMBD301 PDF预览

MMBD301

更新时间: 2024-01-22 03:14:45
品牌 Logo 应用领域
美微科 - MCC 二极管光电二极管
页数 文件大小 规格书
3页 174K
描述
30 Volts Schottky Barrier Diodes

MMBD301 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:ROHS COMPLIANT, PLASTIC PACKAGE-2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.56
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-PDSO-F2
元件数量:1端子数量:2
最高工作温度:125 °C最低工作温度:-55 °C
最大输出电流:0.2 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED最大功率耗散:0.2 W
认证状态:Not Qualified最大重复峰值反向电压:30 V
表面贴装:YES技术:SCHOTTKY
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED

MMBD301 数据手册

 浏览型号MMBD301的Datasheet PDF文件第2页浏览型号MMBD301的Datasheet PDF文件第3页 
M C C  
TM  
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20736 Marilla Street Chatsworth  
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Micro Commercial Components  
MMBD301  
Pin Configuration  
Top View  
)HDWXUHVꢀ  
·
High Efficiency UHF and VHF Detector Applications.  
30 Volts Schottky  
Barrier Diodes  
Low Capacitance and Low Reverse Leakage  
Extremely Low Minority Carrier Lifetime – 15ps (Typ)  
Lead Free Finish/Rohs Compliant ("P"Suffix designates  
RoHS Compliant. See orderingCinformation)  
Epoxy meets UL 94 V-0 flammability rating  
Moisture Sensitivity Level 1  
·
·
SOT-23  
A
D
4T  
B
C
A
F
E
0D[LPXPꢀ5DWLQJVꢀ  
Operating Temperature: -55 to +125  
Storage Temperature: -55 to +150  
H
G
J
K
Rating  
Symbol  
Value  
Unit  
DIMENSIONS  
MM  
Reverse Voltage  
VR  
30  
V
INCHES  
MIN  
Forward Power Dissipation  
@ TA = 25  
Derate above 25  
DIM  
A
B
C
D
E
MAX  
.120  
.098  
.055  
.041  
.081  
.024  
.0039  
.044  
.007  
.020  
MIN  
2.80  
2.10  
1.20  
.89  
1.78  
.45  
.013  
.89  
MAX  
3.04  
2.64  
1.40  
1.03  
2.05  
.60  
.100  
1.12  
.180  
.51  
NOTE  
mW  
mW/  
200  
2.0  
.110  
.083  
.047  
.035  
.070  
.018  
.0005  
.035  
.003  
.015  
PTOT  
F
G
H
J
°
Min  
.085  
.37  
Characteristic  
Symbol  
V(BR)R  
Typ  
Max Test Cond.  
K
Reverse  
Breakdown  
Voltage  
Suggested Solder  
Pad Layout  
IR=10 A  
TA = 25  
30V  
.031  
.800  
IFM = 10mA;  
IFM =1.0mA;  
0.52V  
0.38V  
0.60V  
0.45V  
Forward Voltage  
Reverse Leakage  
.035  
.900  
VF  
.079  
2.000  
inches  
mm  
13nA  
0.9pF  
200nA  
1.5pF  
VR=25Volts  
IR  
Measured at  
f=1.0MHz,  
VR=15V  
Junction  
Capacitance  
CJ  
.037  
.950  
.037  
.950  
www.mccsemi.com  
1 of 3  
Revision: A  
2011/01/01  

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