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MMBD318C PDF预览

MMBD318C

更新时间: 2024-02-16 19:17:23
品牌 Logo 应用领域
SECOS 二极管开关
页数 文件大小 规格书
2页 350K
描述
Surface Mount High Votlage Switching Diode

MMBD318C 数据手册

 浏览型号MMBD318C的Datasheet PDF文件第2页 
MMBD318 Series  
MMBD318/MMBD318A/MMBD318C/MMBD318S  
Elektronische Bauelemente  
Surface Mount High Votlage Switching Diode  
A suffix of "-C" specifies halogen & lead-free  
FEATURES  
SC-59  
Min  
RoHS Compliant Product  
High Reverse Breakdown Voltage  
Ultra high speed Switching  
High Conductance  
Dim  
A
B
C
D
G
H
J
Max  
A
2.700 3.100  
1.400 1.600  
1.000 1.400  
0.350 0.500  
1.800 2.000  
0.000 0.100  
0.085 0.177  
0.400 0.600  
0.850 1.150  
2.400 2.800  
0.450 0.550  
L
S
C
Top View  
B
MECHANICAL DATA  
V
G
Case: SC59, Molded Plastic  
Terminals: Solderable per MIL-STD-202,  
Method 208  
K
L
H
J
D
K
Polarity: See Diagrams Below  
Weight: 0.008 grams (approx.)  
Mounting Position: Any  
S
3
V
All Dimension in mm  
1
2
3
3
3
3
1
2
1
2
1
1
2
2
MMBD318 Marking: LD6  
MMBD318A Marking: LD7  
MMBD318C Marking: LD8  
MMBD318S Marking: LD9  
Absolute Maximum Ratings (T = 25°C unless otherwise noted)  
A
Parameter  
Max.Repetitive Peak Reverse Voltage  
Max.RMS Voltage  
Symbol  
Ratings  
350  
212  
300  
225  
5.0  
Unit  
V
V
RRM  
V
V
RMS  
Max. DC Blocking Voltage  
V
V
DC  
Max. Average Forward Rectified Current  
Typical Junction Capacitance between Terminal (Note 1)  
Max. Reverse Recovery Time (Note2)  
I
mA  
pF  
ns  
o
C
j
T
rr  
50  
Non-Repetive Peak Forward surge Current @Tp=1.0us  
@Tp= 1.0s  
4
1
I
A
FSM  
Power Dissipation  
P
D
mW  
350  
Thermal Resistance Junction to Ambient Air  
Operation and Storage Temperature Range  
Rθ  
357  
°C  
/W  
JA  
T ,T  
-60~+150  
°C  
STG  
j
Electrical Characteristics (AT TA = 25°C unless otherwise noted)  
Max.  
Characteristics  
Min.  
Symbol  
Unit  
V
Reverse Breakdown Voltage. IR=150uA  
V
R
350  
-
nA  
100  
100  
1.0  
Average Reverse Current.  
VR=240V, TA=25  
°C  
-
-
-
I
R
VR=240V, TA=150  
°C  
uA  
V
V
Forward Voltage  
F
Note: 1. Measured at 1.0 MHz and applied reverse of 0 voltage  
Ω
2. Measured at applied forware current of 30mA, RL=100 and recovery to IRR=-3mA  
3. ESD sensitive product handling required.  
http://www.SeCoSGmbH.com  
Any changing of specification will not be informed individual  
01-Jun-2002 Rev. A  
Page 1 of 2  

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