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MMBD330T1G PDF预览

MMBD330T1G

更新时间： 2024-11-04 05:49:19
品牌 Logo 应用领域
安森美 - ONSEMI 二极管
页数 文件大小 规格书
4页 116K
描述
Schottky Barrier Diodes

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中文翻译

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MMBD330T1G 技术参数

是否无铅： 不含铅生命周期：Active
零件包装代码：SC-70包装说明：R-PDSO-G3
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.10.00.60
Factory Lead Time：1 week风险等级：0.73
Samacsys Description：MMBD330T1G, SS SC70 SHKY DIO 30V TR ON Semiconductor MMBD330T1G Schottky Diode, 200mA, 30V dc, 3-Pin SC-70其他特性：LOW REVERSE LEAKAGE
配置：SINGLE最大二极管电容：1.5 pF
二极管元件材料：SILICON二极管类型：MIXER DIODE
最大正向电压 (VF)：0.6 V频带：VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
JESD-30 代码：R-PDSO-G3JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：3最高工作温度：125 °C
最低工作温度：-55 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260最大功率耗散：0.12 W
认证状态：Not Qualified最大重复峰值反向电压：30 V
子类别：Rectifier Diodes表面贴装：YES
技术：SCHOTTKY端子面层：Tin (Sn)
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：40

MMBD330T1G 数据手册

 浏览型号MMBD330T1G的Datasheet PDF文件第2页浏览型号MMBD330T1G的Datasheet PDF文件第3页浏览型号MMBD330T1G的Datasheet PDF文件第4页 
MMBD330T1G,  
MMBD770T1G  
Schottky Barrier Diodes  
Schottky barrier diodes are designed primarily for high-efficiency  
UHF and VHF detector applications. Readily available to many other  
fast switching RF and digital applications. They are housed in the  
SOT-323/SC-70 package which is designed for low-power surface  
mount applications.  
http://onsemi.com  
1
3
Features  
Extremely Low Minority Carrier Lifetime  
Very Low Capacitance  
Low Reverse Leakage  
Available in 8 mm Tape and Reel  
These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS  
Compliant  
MARKING  
DIAGRAMS  
3
1
XX M G  
2
G
MAXIMUM RATINGS  
SC -70/SOT -323  
CASE 419  
1
Rating  
Symbol  
Value  
Unit  
Reverse Voltage  
MMBD330T1  
V
R
30  
70  
Vdc  
XX  
4T  
5H  
M
= Specific Device Code  
MMBD770T1  
= MMBD330T1  
= MMBD770T1  
= Date Code  
Forward Continuous Current (DC)  
I
F
200  
1.0  
mA  
A
G
= Pb--Free Package  
Nonrepetitive Peak Forward Current  
(Note 1)  
I
FSM  
(Note: Microdot may be in either location)  
*Date Code orientation may vary depending  
upon the manufacturing location.  
Forward Power Dissipation  
P
T
120  
mW  
F
T
A
= 25C  
Junction Temperature  
-- 55 to +125  
-- 55 to +150  
C  
C  
J
ORDERING INFORMATION  
Storage Temperature Range  
T
stg  
†
Device  
Package  
Shipping  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. 60 Hz Halfsine.  
MMBD330T1G  
SC--70  
(Pb--Free)  
3000/Tape & Reel  
MMBD770T1G  
SC--70  
3000/Tape & Reel  
(Pb--Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Semiconductor Components Industries, LLC, 2010  
1
Publication Order Number:  
October, 2010 - Rev. 5  
MMBD330T1/D  
1234

中文翻译

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MMBD330T1G 替代型号

型号 品牌 替代类型 描述 数据表
MMBD330T1 ONSEMI

完全替代

 Schottky Barrier Diodes

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