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MMBD352WT1 PDF预览

MMBD352WT1

更新时间: 2024-02-03 02:44:28
品牌 Logo 应用领域
乐山 - LRC 肖特基二极管
页数 文件大小 规格书
2页 47K
描述
Dual Schottky Barrier Diode

MMBD352WT1 技术参数

是否无铅: 不含铅生命周期:Active
零件包装代码:SC-70包装说明:R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.60
Factory Lead Time:15 weeks风险等级:0.71
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:1793133Samacsys Pin Count:3
Samacsys Part Category:DiodeSamacsys Package Category:SOT23 (3-Pin)
Samacsys Footprint Name:SC-70 (SOT-323)Samacsys Released Date:2020-05-13 06:28:19
Is Samacsys:N配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
最大二极管电容:1 pF二极管元件材料:SILICON
二极管类型:MIXER DIODE频带:ULTRA HIGH FREQUENCY
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:2
端子数量:3最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260最大功率耗散:0.2 W
认证状态:Not Qualified子类别:Microwave Mixer Diodes
表面贴装:YES技术:SCHOTTKY
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
Base Number Matches:1

MMBD352WT1 数据手册

 浏览型号MMBD352WT1的Datasheet PDF文件第2页 
LESHAN RADIO COMPANY, LTD.  
Dual Schottky Barrier Diode  
MMBD352WT1  
3
These devices are designed primarily for UHF mixer applications but are  
suitable also for use in detector and ultra–fast switching circuits.  
• Very Low Capacitance — Less Than 1.0 pF @ Zero Volts  
• Low Forward Voltage — 0.5 Volts (Typ) @ IF = 10 mA  
1
2
CASE 419–02 , STYLE 9  
SOT–323 / SC – 70  
2
1
CATHODE  
ANODE  
3
CATHODE/ANODE  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
Continuous Reverse Voltage VR  
7.0  
VCC  
THERMAL CHARACTERISTICS  
Characteristic  
Total Device Dissipation FR– 5 Board(1)  
TA = 25°C  
Symbol  
Max  
Unit  
PD  
200  
mW  
Derate above 25°  
1.6  
625  
300  
mW/°C  
°C/W  
mW  
Thermal Resistance, Junction to Ambient  
RθJA  
PD  
Total Device Dissipation  
Alumina Substrate(2) TA = 25°C  
Derate above 25°C  
2.4  
mW/°C  
°C/W  
°C  
Thermal Resistance, Junction to Ambient  
Junction and Storage Temperature  
DEVICE MARKING  
RθJA  
417  
TJ, Tstg  
–55 to +150  
MMBD352WT1 = M5  
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)  
Characteristic  
OFF CHARACTERISTICS  
Forward Voltage  
Symbol  
Min  
Max  
Unit  
V
VF  
IR  
0.60  
(IF = 10 mAdc)  
Reverse Voltage Leakage Current  
(VR = 3.0 V)  
µA  
0.25  
10  
(VR = 7.0 V)  
Capacitance  
C
1.0  
pF  
(VR = 0 V, f = 1.0 MHz)  
1. FR–5 = 1.0 × 0.75 × 0.062 in.  
2. Alumina = 0.4 × 0.3 × 0.024 in. 99.5% alumina.  
MMBD352WT1–1/2  

MMBD352WT1 替代型号

型号 品牌 替代类型 描述 数据表
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