Datasheet > MMBD352LT1_06

MMBD352LT1_06

更新时间： 2024-11-04 04:39:31

品牌	Logo	应用领域
安森美 - ONSEMI		二极管
页数	文件大小	规格书
3页	94K
描述
Dual Hot Carrier Mixer Diodes

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中文翻译

获取价格

数据手册

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MMBD352LT1_06 数据手册

MMBD352LT1,

MMBD353LT1,

MMBD354LT1,

MMBD355LT1

Dual Hot Carrier Mixer

Diodes

http://onsemi.com

These devices are designed primarily for UHF mixer applications

but are suitable also for use in detector and ultra−fast switching

circuits.

SOT−23 (TO−236)

CASE 318

Features

• Very Low Capacitance − Less Than 1.0 pF @ Zero V

• Low Forward Voltage − 0.5 V (Typ) @ I = 10 mA

ANODE

CATHODE

• Pb−Free Packages are Available

CATHODE/ANODE

MMBD352LT1

STYLE 11

MAXIMUM RATINGS (EACH DIODE)

Rating

Symbol

Value

Unit

Continuous Reverse Voltage

7.0

CATHODE

ANODE

THERMAL CHARACTERISTICS

CATHODE/ANODE

Characteristic

Symbol

Max

Unit

MMBD353LT1

STYLE 19

Total Device Dissipation FR−5 Board,

(Note 1) T = 25°C

225

1.8

mW/°C

Derate above 25°C

1 ANODE

2 ANODE

Thermal Resistance, Junction−to−Ambient

Total Device Dissipation Alumina

556

°C/W

CATHODE

MMBD354LT1

STYLE 9

Substrate, (Note 2) T = 25°C

300

2.4

mW/°C

Derate above 25°C

Thermal Resistance, Junction−to−Ambient

Junction and Storage Temperature

417

°C/W

°C

1 CATHODE

2 CATHODE

T , T

−55 to +150

ANODE 3

stg

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. FR−5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

MMBD355LT1

STYLE 12

MARKING DIAGRAM

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Mxx M G

(EACH DIODE)

Rating

Symbol Min Max

Unit

Mxx = Device Code

Forward Voltage

−

0.60

= Date Code*

(I = 10 mAdc)

= Pb−Free Package

Reverse Leakage Current (Note 3)

(Note: Microdot may be in either location)

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

(V = 3.0 V)

−

0.25

(V = 7.0 V)

Capacitance

−

1.0

ORDERING INFORMATION

See detailed ordering, marking, and shipping information in the

package dimensions section on page 2 of this data sheet.

(V = 0 V, f = 1.0 MHz)

3. For each individual diode while the second diode is unbiased.

Publication Order Number:

September, 2006 − Rev. 6

MMBD352LT1/D

12 3

中文翻译

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与MMBD352LT1_06相关器件

型号	品牌	获取价格	描述	数据表
MMBD352LT1G	ONSEMI	获取价格	Dual Hot Carrier Mixer Diodes
MMBD352LT1G	ROCHESTER	获取价格	SILICON, UHF BAND, MIXER DIODE, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3
MMBD352LT1G_07	ONSEMI	获取价格	Dual Hot Carrier Mixer Diodes
MMBD352LT3	ONSEMI	获取价格	Dual Hot Carrier Mixer Diodes
MMBD352LT3G	ONSEMI	获取价格	Dual Hot Carrier Mixer Diodes
MMBD352LT3G	ROCHESTER	获取价格	SILICON, UHF BAND, MIXER DIODE, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3
MMBD352W	LGE	获取价格	Schottky Barrier Diodes
MMBD352W	PANJIT	获取价格	SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE
MMBD352W	WON-TOP	获取价格	SMD
MMBD352WT1	ONSEMI	获取价格	Dual Shottky Barrier Diode

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