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MMBD352WT1G PDF预览

MMBD352WT1G

更新时间: 2024-09-23 04:39:31
品牌 Logo 应用领域
安森美 - ONSEMI 肖特基二极管微波混频二极管光电二极管PC
页数 文件大小 规格书
4页 43K
描述
Dual Schottky Barrier Diode

MMBD352WT1G 技术参数

是否无铅: 不含铅生命周期:Active
零件包装代码:SC-70包装说明:R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.60
Factory Lead Time:15 weeks风险等级:0.71
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:1793133Samacsys Pin Count:3
Samacsys Part Category:DiodeSamacsys Package Category:SOT23 (3-Pin)
Samacsys Footprint Name:SC-70 (SOT-323)Samacsys Released Date:2020-05-13 06:28:19
Is Samacsys:N配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
最大二极管电容:1 pF二极管元件材料:SILICON
二极管类型:MIXER DIODE频带:ULTRA HIGH FREQUENCY
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:2
端子数量:3最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260最大功率耗散:0.2 W
认证状态:Not Qualified子类别:Microwave Mixer Diodes
表面贴装:YES技术:SCHOTTKY
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
Base Number Matches:1

MMBD352WT1G 数据手册

 浏览型号MMBD352WT1G的Datasheet PDF文件第2页浏览型号MMBD352WT1G的Datasheet PDF文件第3页浏览型号MMBD352WT1G的Datasheet PDF文件第4页 
MMBD352WT1  
Dual Schottky Barrier Diode  
These devices are designed primarily for UHF mixer applications  
but are suitable also for use in detector and ultra−fast switching  
circuits.  
Features  
http://onsemi.com  
Very Low Capacitance − Less Than 1.0 pF @ Zero Volts  
Low Forward Voltage − 0.5 Volts (Typ) @ I = 10 mA  
F
Pb−Free Package is Available  
1
2
ANODE  
CATHODE  
3
CATHODE/ANODE  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
Continuous Reverse Voltage  
V
R
7.0  
V
CC  
3
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
SOT−323 (SC−70)  
CASE 419  
1
STYLE 9  
2
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Total Device Dissipation FR5 Board  
(Note 1)  
T = 25°C  
A
P
D
200  
mW  
MARKING DIAGRAM  
Derate above 25°C  
1.6  
mW/°C  
°C/W  
Thermal Resistance,  
Junction−to−Ambient  
R
625  
q
JA  
M5 M  
Total Device Dissipation Alumina  
P
D
300  
mW  
Substrate (Note 2) T = 25°C  
A
Derate above 25°C  
2.4  
mW/°C  
°C/W  
Thermal Resistance,  
Junction−to−Ambient  
R
417  
q
JA  
M5  
M
= Device Code  
= Date Code  
Junction and Storage Temperature  
T , T  
55 to +150  
°C  
J
stg  
1. FR5 = 1.0 0.75 0.062 in.  
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.  
ORDERING INFORMATION  
Device  
Package  
Shipping  
MMBD352WT1  
MMBD352WT1G  
SOT−323 3000/Tape & Reel  
SOT−323 3000/Tape & Reel  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
April, 2005 − Rev. 3  
MMBD352WT1/D  
 

MMBD352WT1G 替代型号

型号 品牌 替代类型 描述 数据表
MMBD352WT1 ONSEMI

类似代替

Dual Shottky Barrier Diode
BAV199W NXP

功能相似

Low-leakage double diode

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