Datasheet > MMBD352WT3

MMBD352WT3

更新时间： 2024-02-03 00:36:09

品牌	Logo	应用领域
安森美 - ONSEMI		光电二极管
页数	文件大小	规格书
33页	302K
描述
SILICON, UHF BAND, MIXER DIODE, SC-70, 3 PIN

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中文翻译

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技术参数
数据手册

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MMBD352WT3 技术参数

生命周期：	Obsolete	包装说明：	R-PDSO-G3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.60	风险等级：	5.66
配置：	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	最大二极管电容：	1 pF
二极管元件材料：	SILICON	二极管类型：	MIXER DIODE
频带：	ULTRA HIGH FREQUENCY	JESD-30 代码：	R-PDSO-G3
元件数量：	2	端子数量：	3
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	认证状态：	Not Qualified
表面贴装：	YES	技术：	SCHOTTKY
端子形式：	GULL WING	端子位置：	DUAL
Base Number Matches：	1

MMBD352WT3 数据手册

SEMICONDUCTOR TECHNICAL DATA

These devices are designed primarily for UHF mixer applications but are suitable

also for use in detector and ultra–fast switching circuits.

•

Very Low Capacitance — Less Than 1.0 pF @ Zero Volts

Low Forward Voltage — 0.5 Volts (Typ) @ I = 10 mA

ANODE

CATHODE

CATHODE/ANODE

MMBD352WT1

CASE 419–02, STYLE 9

SOT–323 (SC–70)

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Continuous Reverse Voltage

THERMAL CHARACTERISTICS

Characteristic

7.0

Symbol

Max

Unit

(1)

Total Device Dissipation FR–5 Board

200

= 25°C

Derate above 25°C

1.6

625

300

mW/°C

°C/W

Thermal Resistance, Junction to Ambient

Total Device Dissipation

(2)

Alumina Substrate

= 25°C

Derate above 25°C

2.4

417

mW/°C

°C/W

°C

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

DEVICE MARKING

T , T

J stg

–55 to +150

MMBD352WT1 = M5

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Forward Voltage

Symbol

Min

Max

Unit

—

0.60

(I = 10 mAdc)

Reverse Voltage Leakage Current

(V = 3.0 V)

—

0.25

(V = 7.0 V)

Capacitance

—

1.0

(V = 0 V, f = 1.0 MHz)

1. FR–5 = 1.0

2. Alumina = 0.4

0.75 0.062 in.

0.3 0.024 in. 99.5% alumina.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

5–101

12 3 4 5 6 7...33

中文翻译

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