Datasheet > MMBD352WT1_05

MMBD352WT1_05

更新时间： 2024-11-04 04:39:31

品牌	Logo	应用领域
安森美 - ONSEMI		肖特基二极管
页数	文件大小	规格书
4页	43K
描述
Dual Schottky Barrier Diode

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MMBD352WT1_05 数据手册

MMBD352WT1

Dual Schottky Barrier Diode

These devices are designed primarily for UHF mixer applications

but are suitable also for use in detector and ultra−fast switching

circuits.

Features

http://onsemi.com

• Very Low Capacitance − Less Than 1.0 pF @ Zero Volts

• Low Forward Voltage − 0.5 Volts (Typ) @ I = 10 mA

• Pb−Free Package is Available

ANODE

CATHODE

CATHODE/ANODE

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Continuous Reverse Voltage

7.0

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

SOT−323 (SC−70)

CASE 419

STYLE 9

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR−5 Board

(Note 1)

T = 25°C

200

MARKING DIAGRAM

Derate above 25°C

1.6

mW/°C

°C/W

Thermal Resistance,

Junction−to−Ambient

625

M5 M

Total Device Dissipation Alumina

300

Substrate (Note 2) T = 25°C

Derate above 25°C

2.4

mW/°C

°C/W

Thermal Resistance,

Junction−to−Ambient

417

= Device Code

= Date Code

Junction and Storage Temperature

T , T

−55 to +150

°C

stg

1. FR−5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.

2. Alumina = 0.4 ꢀ 0.3 ꢀ 0.024 in. 99.5% alumina.

ORDERING INFORMATION

†

Device

Package

Shipping

MMBD352WT1

MMBD352WT1G

SOT−323 3000/Tape & Reel

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Semiconductor Components Industries, LLC, 2005

Publication Order Number:

April, 2005 − Rev. 3

MMBD352WT1/D

12 3 4

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