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MMBD353LT1 PDF预览

MMBD353LT1

更新时间: 2024-01-24 18:53:52
品牌 Logo 应用领域
安森美 - ONSEMI 二极管
页数 文件大小 规格书
4页 45K
描述
Dual Hot Carrier Mixer Diodes

MMBD353LT1 技术参数

是否无铅: 含铅生命周期:Active
零件包装代码:SOT-23包装说明:HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN
针数:3Reach Compliance Code:unknown
风险等级:5.71Is Samacsys:N
配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS最大二极管电容:1 pF
二极管元件材料:SILICON二极管类型:MIXER DIODE
频带:ULTRA HIGH FREQUENCYJEDEC-95代码:TO-236AB
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:NOT SPECIFIED元件数量:2
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260最大功率耗散:0.225 W
认证状态:COMMERCIAL表面贴装:YES
端子面层:MATTE TIN端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
Base Number Matches:1

MMBD353LT1 数据手册

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ON Semiconductort  
MMBD352LT1  
MMBD353LT1  
MMBD354LT1  
MMBD355LT1  
Dual Hot Carrier Mixer Diodes  
These devices are designed primarily for UHF mixer applications  
but are suitable also for use in detector and ultra–fast switching  
circuits.  
Very Low Capacitance — Less Than 1.0 pF @ Zero Volts  
Low Forward Voltage — 0.5 Volts (Typ) @ I = 10 mA  
3
F
1
2
1
2
ANODE  
CATHODE  
3
CATHODE/ANODE  
MAXIMUM RATINGS (EACH DIODE)  
MMBD352LT1  
CASE 318–08, STYLE 11  
SOT–23 (TO–236AB)  
Rating  
Symbol  
Value  
Unit  
Continuous Reverse Voltage  
THERMAL CHARACTERISTICS  
Characteristic  
V
R
7.0  
V
CC  
1
2
Symbol  
Max  
Unit  
CATHODE  
ANODE  
3
(1)  
Total Device Dissipation FR–5 Board  
P
D
225  
mW  
CATHODE/ANODE  
T
A
= 25°C  
Derate above 25°C  
1.8  
556  
300  
mW/°C  
°C/W  
mW  
MMBD353LT1  
CASE 318–08, STYLE 19  
SOT–23 (TO–236AB)  
Thermal Resistance, Junction to Ambient  
Total Device Dissipation  
R
qJA  
P
D
(2)  
Alumina Substrate  
T
= 25°C  
A
Derate above 25°C  
2.4  
417  
mW/°C  
°C/W  
°C  
ANODE  
1
Thermal Resistance, Junction to Ambient  
Junction and Storage Temperature  
DEVICE MARKING  
R
qJA  
3
2
CATHODE  
T , T  
J stg  
–55 to +150  
ANODE  
MMBD354LT1  
MMBD352LT1 = M5G; MMBD353LT1 = M4F; MMBD354LT1 = M6H; MMBD355LT1 = MJ1  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (EACH DIODE)  
CASE 318–08, STYLE 9  
SOT–23 (TO–236AB)  
A
Characteristic  
OFF CHARACTERISTICS  
Forward Voltage  
Symbol  
Min  
Max  
Unit  
CATHODE  
ANODE  
1
V
F
0.60  
V
3
2
(I = 10 mAdc)  
F
CATHODE  
Reverse Voltage Leakage Current (Note 3.)  
I
R
mA  
MMBD355LT1  
CASE 318–08, STYLE 12  
SOT–23 (TO–236AB)  
(V = 3.0 V)  
0.25  
10  
R
(V = 7.0 V)  
R
Capacitance  
C
1.0  
pF  
(V = 0 V, f = 1.0 MHz)  
R
1. FR–5 = 1.0 0.75 0.062 in.  
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.  
3. For each individual diode while the second diode is unbiased.  
Semiconductor Components Industries, LLC, 2001  
1
Publication Order Number:  
MMBD352LT1/D  
November, 2001 – Rev. 4  

MMBD353LT1 替代型号

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