Datasheet > MMBD352

MMBD352

更新时间： 2024-11-03 22:46:07

品牌	Logo	应用领域
乐山 - LRC		二极管光电二极管
页数	文件大小	规格书
2页	48K
描述
Dual Hot Carrier Mixer Diodes

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数据手册

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MMBD352 数据手册

LESHAN RADIO COMPANY, LTD.

Dual Hot Carrier Mixer Diodes

These devices are designed primarily for UHF mixer applications but are

suitable also for use in detector and ultra–fast switching circuits.

• Very Low Capacitance — Less Than 1.0 pF @ Zero Volts

• Low Forward Voltage — 0.5 Volts (Typ) @ I _F= 10 mA

MMBD352LT1

MMBD353LT1

MMBD354LT1

MMBD355LT1

MAXIMUM RATINGS (EACH DIODE)

Rating

Symbol

Value

Unit

Continuous Reverse Voltage

THERMALCHARACTERISTICS

Characteristic

V _R

7.0

V _CC

CATHODE

ANODE

Symbol

Max

Unit

Total Device Dissipation FR– 5 Board ⁽¹⁾

P _D

225

CATHODE/ANODE

T _A= 25°C

Derate above 25°C

1.8

556

300

mW/°C

°C/W

MMBD352LT1

CASE 318–08, STYLE 11

SOT– 23 (TO–236AB)

Thermal Resistance, Junction to Ambient

Total Device Dissipation

R_θJA

P_D

Alumina Substrate (2) T _A= 25°C

Derate above 25°C

2.4

417

mW/°C

°C/W

°C

CATHODE

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

DEVICE MARKING

R_θJA

ANODE

T _J,T _stg

–55 to +150

CATHODE/ANODE

MMBD352LT1 = M5G; MMBD353LT1 = M4F; MMBD354LT1 = M6H; MMBD355LT1 = MJ1

MMBD353LT1

CASE 318–08, STYLE 19

SOT– 23 (TO–236AB)

ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise noted) (EACH DIODE)

Characteristic

OFF CHARACTERISTICS

Forward Voltage

Symbol

Min

Max

Unit

ANODE

V _F

I_R

—

0.60

(I _F= 10 mAdc)

Reverse Voltage Leakage Current

(V _R= 3.0 V)

µA

CATHODE

ANODE

—

0.25

(V _R= 7.0 V)

MMBD354LT1

CASE 318–08, STYLE 9

SOT– 23 (TO–236AB)

Capacitance

—

1.0

(V _R= 0 V, f = 1.0 MHz)

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

CATHODE

ANODE

CATHODE

MMBD355LT1

CASE 318–08, STYLE 12

SOT– 23 (TO–236AB)

MMBD352. 353. 354. 355LT –1/2

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MMBD352LT1	ONSEMI	获取价格	Dual Hot Carrier Mixer Diodes
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MMBD352LT1	MOTOROLA	获取价格	Dual Hot Carrier Mixer Diodes
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