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MMBD330T1 PDF预览

MMBD330T1

更新时间: 2024-11-03 22:46:07
品牌 Logo 应用领域
安森美 - ONSEMI 二极管
页数 文件大小 规格书
8页 156K
描述
Schottky Barrier Diodes

MMBD330T1 数据手册

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BY MMBD110T1/D  
SEMICONDUCTOR TECHNICAL DATA  
Schottky barrier diodes are designed primarily for high–efficiency UHF and  
VHF detector applications. Readily available to many other fast switching RF  
and digital applications. They are housed in the SOT–323/SC–70 package  
which is designed for low–power surface mount applications.  
3
Extremely Low Minority Carrier Lifetime  
Very Low Capacitance  
1
2
CASE 419A–02, STYLE 2  
SOT-323/SC–70  
Low Reverse Leakage  
Available in 8 mm Tape and Reel  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
Reverse Voltage  
MMBD110T1  
MMBD330T1  
MMBD770T1  
V
R
7.0  
30  
70  
Vdc  
Forward Power Dissipation  
P
T
120  
mW  
F
T
A
= 25°C  
Junction Temperature  
55 to +125  
55 to +150  
°C  
°C  
J
Storage Temperature Range  
T
stg  
DEVICE MARKING  
MMBD110T1 = 4M  
MMBD330T1 = 4T  
MMBD770T1 = 5H  
Thermal Clad is a registered trademark of the Bergquist Company.  
Motorola, Inc. 1996

MMBD330T1 替代型号

型号 品牌 替代类型 描述 数据表
MMBD330T1G ONSEMI

完全替代

Schottky Barrier Diodes
MMBD330T1 MOTOROLA

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Schottky Barrier Diodes

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