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MMBD330T1 PDF预览

MMBD330T1

更新时间: 2024-11-03 22:46:07
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 二极管
页数 文件大小 规格书
8页 156K
描述
Schottky Barrier Diodes

MMBD330T1 技术参数

生命周期:Transferred包装说明:R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.60风险等级:5.15
其他特性:LOW REVERSE LEAKAGE配置:SINGLE
最大二极管电容:1.5 pF二极管元件材料:SILICON
二极管类型:MIXER DIODE最大正向电压 (VF):0.6 V
频带:VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCYJESD-30 代码:R-PDSO-G3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:125 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
最大功率耗散:0.12 W认证状态:Not Qualified
最大重复峰值反向电压:30 V子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:DUALBase Number Matches:1

MMBD330T1 数据手册

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Order this document  
BY MMBD110T1/D  
SEMICONDUCTOR TECHNICAL DATA  
Schottky barrier diodes are designed primarily for high–efficiency UHF and  
VHF detector applications. Readily available to many other fast switching RF  
and digital applications. They are housed in the SOT–323/SC–70 package  
which is designed for low–power surface mount applications.  
3
Extremely Low Minority Carrier Lifetime  
Very Low Capacitance  
1
2
CASE 419A–02, STYLE 2  
SOT-323/SC–70  
Low Reverse Leakage  
Available in 8 mm Tape and Reel  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
Reverse Voltage  
MMBD110T1  
MMBD330T1  
MMBD770T1  
V
R
7.0  
30  
70  
Vdc  
Forward Power Dissipation  
P
T
120  
mW  
F
T
A
= 25°C  
Junction Temperature  
55 to +125  
55 to +150  
°C  
°C  
J
Storage Temperature Range  
T
stg  
DEVICE MARKING  
MMBD110T1 = 4M  
MMBD330T1 = 4T  
MMBD770T1 = 5H  
Thermal Clad is a registered trademark of the Bergquist Company.  
Motorola, Inc. 1996

MMBD330T1 替代型号

型号 品牌 替代类型 描述 数据表
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