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MMBD301LT3 PDF预览

MMBD301LT3

更新时间: 2024-02-24 10:56:32
品牌 Logo 应用领域
安森美 - ONSEMI 微波混频二极管光电二极管
页数 文件大小 规格书
5页 66K
描述
Silicon Hot−Carrier Diodes SCHOTTKY Barrier Diodes

MMBD301LT3 技术参数

是否无铅: 不含铅生命周期:Active
零件包装代码:SOT-23包装说明:R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.60
风险等级:5.09配置:SINGLE
最大二极管电容:1.5 pF二极管元件材料:SILICON
二极管类型:MIXER DIODE最大正向电压 (VF):0.45 V
频带:ULTRA HIGH FREQUENCYJEDEC-95代码:TO-236
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:125 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260最大功率耗散:0.2 W
认证状态:Not Qualified最大重复峰值反向电压:30 V
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40Base Number Matches:1

MMBD301LT3 数据手册

 浏览型号MMBD301LT3的Datasheet PDF文件第2页浏览型号MMBD301LT3的Datasheet PDF文件第3页浏览型号MMBD301LT3的Datasheet PDF文件第4页浏览型号MMBD301LT3的Datasheet PDF文件第5页 
MBD301, MMBD301LT1  
Preferred Device  
Silicon Hot−Carrier Diodes  
SCHOTTKY Barrier Diodes  
These devices are designed primarily for high−efficiency UHF and  
VHF detector applications. They are readily adaptable to many other  
fast switching RF and digital applications. They are supplied in an  
inexpensive plastic package for low−cost, high−volume consumer  
and industrial/commercial requirements. They are also available in a  
Surface Mount package.  
http://onsemi.com  
30 VOLTS  
SILICON HOT−CARRIER  
DETECTOR AND SWITCHING  
DIODES  
Features  
Extremely Low Minority Carrier Lifetime − 15 ps (Typ)  
Very Low Capacitance − 1.5 pF (Max) @ V = 15 V  
R
MBD301  
Low Reverse Leakage − I = 13 nAdc (Typ) MBD301, MMBD301  
R
MARKING  
DIAGRAM  
Pb−Free Packages are Available  
TO−92  
(TO−226AC)  
CASE 182  
STYLE 1  
MBD  
301  
AYWWG  
MAXIMUM RATINGS  
MBD301 MMBD301LT1  
G
1
2
Rating  
Reverse Voltage  
Symbol  
Value  
Unit  
A
Y
= Assembly Location  
= Year  
V
R
30  
V
Total Device Dissipation  
P
WW  
= Work Week  
= Pb−Free Package  
F
J
@ T = 25°C  
280  
2.8  
200  
2.0  
mW  
mW/°C  
A
G
Derate above 25°C  
(Note: Microdot may be in either location)  
Operating Junction  
Temperature Range  
T
−55 to +125  
°C  
2
1
Storage Temperature Range  
T
stg  
−55 to +150  
°C  
CATHODE  
ANODE  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
RecommendedOperating Conditions may affect device reliability.  
MMBD301LT1  
MARKING  
DIAGRAM  
3
SOT−23  
(TO−236)  
CASE 318  
STYLE 8  
4T M G  
G
1
2
1
M
= Date Code  
G
= Pb−Free Package  
(Note: Microdot may be in either location)  
3
1
CATHODE  
ANODE  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2007  
1
Publication Order Number:  
January, 2007 − Rev. 4  
MBD301/D  

MMBD301LT3 替代型号

型号 品牌 替代类型 描述 数据表
MMBD301LT3G ONSEMI

类似代替

Silicon Hot−Carrier Diodes SCHOTTKY Barrier Diodes
MMBD301LT1G ONSEMI

类似代替

Silicon Hot−Carrier Diodes SCHOTTKY Barrier Diodes

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