Datasheet > MMBD301SE

MMBD301SE

更新时间： 2024-11-05 14:54:43

品牌	Logo	应用领域
先科 - SWST		肖特基二极管
页数	文件大小	规格书
3页	148K
描述
肖特基二极管

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中文翻译

获取价格

数据手册

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MMBD301SE 数据手册

MMBD301SE

Schottky Barrier Diode

Features

• Low reverse leakage

• Very low capacitance

• Extremely low minority carrier lifetime

SOT-23 Plastic Package

1. Anode 2. Cathode 3. Cathode/ Anode

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

V_R

Value

Unit

Reverse Voltage

Average Rectified Forward Current

I_F(AV)

Peak Forward Surge Current 8.3 ms Half Sine-wave

Superimposed on Rated Load (JEDEC method)

I_FSM

200

Junction Temperature Range

Storage Temperature Range

T_j

- 55 to + 125

- 55 to + 150

℃

T_stg

Characteristics at T_a= 25℃

Parameter

Symbol

V_(BR)R

Min.

Max.

Unit

Reverse Breakdown Voltage

at I_R= 100 µA

Forward Voltage

at I_F= 1 mA

at I_F= 10 mA

V_F

0.45

0.6

Reverse Current

at V_R= 25 V

I_R

200

1 / 3

Dated：18/09/2023 Rev：02

12 3

中文翻译

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