5秒后页面跳转
MMBD318 PDF预览

MMBD318

更新时间: 2024-01-04 12:36:48
品牌 Logo 应用领域
SECOS 二极管开关
页数 文件大小 规格书
2页 350K
描述
Surface Mount High Votlage Switching Diode

MMBD318 数据手册

 浏览型号MMBD318的Datasheet PDF文件第2页 
MMBD318 Series  
MMBD318/MMBD318A/MMBD318C/MMBD318S  
Elektronische Bauelemente  
Surface Mount High Votlage Switching Diode  
A suffix of "-C" specifies halogen & lead-free  
FEATURES  
SC-59  
Min  
RoHS Compliant Product  
High Reverse Breakdown Voltage  
Ultra high speed Switching  
High Conductance  
Dim  
A
B
C
D
G
H
J
Max  
A
2.700 3.100  
1.400 1.600  
1.000 1.400  
0.350 0.500  
1.800 2.000  
0.000 0.100  
0.085 0.177  
0.400 0.600  
0.850 1.150  
2.400 2.800  
0.450 0.550  
L
S
C
Top View  
B
MECHANICAL DATA  
V
G
Case: SC59, Molded Plastic  
Terminals: Solderable per MIL-STD-202,  
Method 208  
K
L
H
J
D
K
Polarity: See Diagrams Below  
Weight: 0.008 grams (approx.)  
Mounting Position: Any  
S
3
V
All Dimension in mm  
1
2
3
3
3
3
1
2
1
2
1
1
2
2
MMBD318 Marking: LD6  
MMBD318A Marking: LD7  
MMBD318C Marking: LD8  
MMBD318S Marking: LD9  
Absolute Maximum Ratings (T = 25°C unless otherwise noted)  
A
Parameter  
Max.Repetitive Peak Reverse Voltage  
Max.RMS Voltage  
Symbol  
Ratings  
350  
212  
300  
225  
5.0  
Unit  
V
V
RRM  
V
V
RMS  
Max. DC Blocking Voltage  
V
V
DC  
Max. Average Forward Rectified Current  
Typical Junction Capacitance between Terminal (Note 1)  
Max. Reverse Recovery Time (Note2)  
I
mA  
pF  
ns  
o
C
j
T
rr  
50  
Non-Repetive Peak Forward surge Current @Tp=1.0us  
@Tp= 1.0s  
4
1
I
A
FSM  
Power Dissipation  
P
D
mW  
350  
Thermal Resistance Junction to Ambient Air  
Operation and Storage Temperature Range  
Rθ  
357  
°C  
/W  
JA  
T ,T  
-60~+150  
°C  
STG  
j
Electrical Characteristics (AT TA = 25°C unless otherwise noted)  
Max.  
Characteristics  
Min.  
Symbol  
Unit  
V
Reverse Breakdown Voltage. IR=150uA  
V
R
350  
-
nA  
100  
100  
1.0  
Average Reverse Current.  
VR=240V, TA=25  
°C  
-
-
-
I
R
VR=240V, TA=150  
°C  
uA  
V
V
Forward Voltage  
F
Note: 1. Measured at 1.0 MHz and applied reverse of 0 voltage  
Ω
2. Measured at applied forware current of 30mA, RL=100 and recovery to IRR=-3mA  
3. ESD sensitive product handling required.  
http://www.SeCoSGmbH.com  
Any changing of specification will not be informed individual  
01-Jun-2002 Rev. A  
Page 1 of 2  

与MMBD318相关器件

型号 品牌 获取价格 描述 数据表
MMBD318_10 SECOS

获取价格

Surface Mount High Vitlage Switching Diode
MMBD318A SECOS

获取价格

Surface Mount High Votlage Switching Diode
MMBD318C SECOS

获取价格

Surface Mount High Votlage Switching Diode
MMBD318S SECOS

获取价格

Surface Mount High Votlage Switching Diode
MMBD330 LGE

获取价格

Schottky Barrier Diodes
MMBD330 WON-TOP

获取价格

SMD
MMBD330T1 MOTOROLA

获取价格

Schottky Barrier Diodes
MMBD330T1 ONSEMI

获取价格

Schottky Barrier Diodes
MMBD330T1 LRC

获取价格

Schottky Barrier Diodes
MMBD330T1G ONSEMI

获取价格

Schottky Barrier Diodes