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MMBD301LT1 PDF预览

MMBD301LT1

更新时间: 2024-02-23 15:19:00
品牌 Logo 应用领域
乐山 - LRC 二极管
页数 文件大小 规格书
2页 56K
描述
Silicon Hot-Carrier Diodes Schottky Barrier Diodes

MMBD301LT1 技术参数

是否无铅: 不含铅生命周期:Active
零件包装代码:SOT-23包装说明:R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.60
Factory Lead Time:1 week风险等级:0.5
配置:SINGLE最大二极管电容:1.5 pF
二极管元件材料:SILICON二极管类型:MIXER DIODE
频带:ULTRA HIGH FREQUENCYJEDEC-95代码:TO-236
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:125 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260最大功率耗散:0.2 W
认证状态:Not Qualified子类别:Other Diodes
表面贴装:YES技术:SCHOTTKY
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
Base Number Matches:1

MMBD301LT1 数据手册

 浏览型号MMBD301LT1的Datasheet PDF文件第2页 
LESHAN RADIO COMPANY, LTD.  
Silicon Hot–Carrier Diodes  
Schottky Barrier Diodes  
MMBD301LT1  
These devices are designed primarily for high–efficiency UHF and VHF detector  
applications.They are readily adaptable to many other fast switching RF and digital  
applications.They are supplied in an inexpensive plastic package for low–cost,  
high–volume consumer and industrial/commercial requirements.They are also  
available in a Surface Mount package.  
30 VOLTS  
SILICON HOT–CARRIER  
DETECTOR AND SWITCHING  
DIODES  
EXtremely Low Minority Carrier Lifetime –15ps(Typ)  
very Low Capacitance –1.5pF(Max)@VR=15V  
3
CLow Reverse Leakage –IR=13 nAdc(Typ)MBD301,MMBD301  
1
2
1
3
ANODE  
CASE 318–08, STYLE 6  
SOT– 23 (TO–236AB)  
CATHODE  
MAXIMUM RATINGS(TJ=125°C unless otherwise noted)  
MBD301  
MMBD301LT1  
value  
30  
Rating  
Reverse Voltage  
symbol  
unit  
V
Volts  
R
Forward Power Dissipation  
@TA=25 °C  
P F  
280  
2.8  
200  
2.0  
mW  
mW/ °C  
°C  
Derate above 25 °C  
Operating Junction  
Temperature Range  
Storage Temperature Range  
DEVICE MARKING  
MMBD301LT1=4T  
T J  
–55 to +125  
–55 to +150  
T stg  
°C  
ELECTRICAL CHARACTERISTICS(TA=25 °C unless otherwise noted)  
Characteristic  
Reverse Breakdown Voltage(IR=10µA)  
Total Capacitance(VR=15V,f=1.0MHz,)Figure1  
Reverse Leakage(VR=25V)Figure3  
Symbol  
V (BR)R  
C T  
Min  
30  
Typ  
Max  
Unit  
Volts  
pF  
0.9  
1.5  
IR  
13  
200  
0.45  
0.6  
nAdc  
Vdc  
Vdc  
Forward Voltage(IF=1.0mAdc)Figure4  
Forward Voltage(IF=10mAdc)Figure4  
V
0.38  
0.52  
F
V
F
NOTE:MMBD301LT1 is also available in bulk packaging.Use MMBD301L as the device title to order this device in bulk.  
G16–1/2  

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