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MMBD301LT1 PDF预览

MMBD301LT1

更新时间: 2024-09-22 22:46:07
品牌 Logo 应用领域
安森美 - ONSEMI 二极管开关
页数 文件大小 规格书
4页 94K
描述
SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES

MMBD301LT1 技术参数

是否无铅: 含铅生命周期:End Of Life
零件包装代码:SOT-23包装说明:PLASTIC, CASE 318-08, TO-236, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.60
Factory Lead Time:1 week风险等级:5.16
配置:SINGLE最大二极管电容:1.5 pF
二极管元件材料:SILICON二极管类型:MIXER DIODE
频带:VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCYJEDEC-95代码:TO-236AB
JESD-30 代码:R-PDSO-G3JESD-609代码:e0
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:125 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):240
最大功率耗散:0.2 W认证状态:Not Qualified
子类别:Other Diodes表面贴装:YES
技术:SCHOTTKY端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:30Base Number Matches:1

MMBD301LT1 数据手册

 浏览型号MMBD301LT1的Datasheet PDF文件第2页浏览型号MMBD301LT1的Datasheet PDF文件第3页浏览型号MMBD301LT1的Datasheet PDF文件第4页 
Order this document  
by MBD301/D  
SEMICONDUCTOR TECHNICAL DATA  
Schottky Barrier Diodes  
Motorola Preferred Devices  
These devices are designed primarily for high–efficiency UHF and VHF detector  
applications. They are readily adaptable to many other fast switching RF and digital  
applications. They are supplied in an inexpensive plastic package for low–cost,  
high–volume consumer and industrial/commercial requirements. They are also  
available in a Surface Mount package.  
30 VOLTS  
SILICON HOT–CARRIER  
DETECTOR AND SWITCHING  
DIODES  
Extremely Low Minority Carrier Lifetime – 15 ps (Typ)  
Very Low Capacitance – 1.5 pF (Max) @ V = 15 V  
R
Low Reverse Leakage – I = 13 nAdc (Typ) MBD301, MMBD301  
R
1
2
CASE 18202, STYLE 1  
(TO–226AC)  
MAXIMUM RATINGS (T = 125°C unless otherwise noted)  
J
MBD301  
MMBD301LT1  
Value  
30  
Rating  
Reverse Voltage  
Forward Power Dissipation  
Symbol  
Unit  
2
1
CATHODE  
ANODE  
V
R
Volts  
P
F
J
@ T = 25°C  
280  
2.8  
200  
2.0  
mW  
mW/°C  
A
Derate above 25°C  
3
Operating Junction  
Temperature Range  
T
°C  
°C  
55 to +125  
55 to +150  
1
2
Storage Temperature Range  
DEVICE MARKING  
MMBD301LT1 = 4T  
T
stg  
CASE 31808, STYLE 8  
SOT23 (TO236AB)  
3
1
CATHODE  
ANODE  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
30  
Typ  
Max  
Unit  
Volts  
pF  
Reverse Breakdown Voltage (I = 10 µA)  
V
(BR)R  
R
Total Capacitance (V = 15 V, f = 1.0 MHz) Figure 1  
C
0.9  
1.5  
R
T
Reverse Leakage (V = 25 V) Figure 3  
I
13  
200  
0.45  
0.6  
nAdc  
Vdc  
Vdc  
R
R
Forward Voltage (I = 1.0 mAdc) Figure 4  
V
0.38  
0.52  
F
F
F
Forward Voltage (I = 10 mAdc) Figure 4  
V
F
NOTE: MMBD301LT1 is also available in bulk packaging. Use MMBD301L as the device title to order this device in bulk.  
Thermal Clad is a registered trademark of the Berquist Company.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
Motorola, Inc. 1997  

MMBD301LT1 替代型号

型号 品牌 替代类型 描述 数据表
MMBD301LT3G ONSEMI

类似代替

Silicon Hot−Carrier Diodes SCHOTTKY Barrier Diodes
MMBD301LT1G ONSEMI

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Silicon Hot−Carrier Diodes SCHOTTKY Barrier Diodes

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