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MJE3055TTU PDF预览

MJE3055TTU

更新时间： 2024-11-16 13:11:35
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
4页 132K
描述
Bipolar Power Transistor, NPN, 10 A, 60 V, 75 Watt, 1000-TUBE

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中文翻译

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MJE3055TTU 技术参数

是否无铅：不含铅生命周期：End Of Life
包装说明：TO-220, 3 PINReach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
风险等级：5.99Is Samacsys：N
最大集电极电流 (IC)：10 A集电极-发射极最大电压：60 V
配置：SINGLE最小直流电流增益 (hFE)：5
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
JESD-609代码：e3元件数量：1
端子数量：3最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：NPN最大功率耗散 (Abs)：75 W
认证状态：Not Qualified子类别：Other Transistors
表面贴装：NO端子面层：Tin (Sn)
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：2 MHz
Base Number Matches：1

MJE3055TTU 数据手册

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Order this document  
by MJE2955T/D  
SEMICONDUCTOR TECHNICAL DATA  
. . . designed for use in general–purpose amplifier and switching applications.  
*Motorola Preferred Device  
•
•
DC Current Gain Specified to 10 Amperes  
High Current Gain — Bandwidth Product —  
10 AMPERE  
COMPLEMENTARY  
SILICON  
f
T
= 2.0 MHz (Min) @ I = 500 mAdc  
C
POWER TRANSISTORS  
60 VOLTS  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
60  
Unit  
Vdc  
75 WATTS  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Collector Current  
V
CEO  
V
CB  
70  
Vdc  
V
EB  
5.0  
10  
Vdc  
I
C
Adc  
Base Current  
I
6.0  
75  
Adc  
B
Total Power Dissipation @ T = 25 C  
C
Derate above 25 C  
P †  
D
Watts  
0.6  
W/ C  
C
MJE3055T, MJE2955T  
Operating and Storage Junction  
Temperature Range  
T , T  
–55 to +150  
J
stg  
CASE 221A–06  
TO–220AB  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance, Junction to Case  
θ
1.67  
C/W  
JC  
†Safe Area Curves are indicated by Figure 1. Both limits are applicable and must be observed.  
10  
7.0  
100 µs  
There are two limitations on the power handling ability of a  
transistor: average junction temperature and second break-  
1.0 ms  
5.0 ms  
5.0  
dc  
down. Safe operating area curves indicate I – V  
limits of  
C
CE  
3.0  
2.0  
the transistor that must be observed for reliable operation;  
i.e., the transistor must not be subjected to greater dissipa-  
tion than the curves indicate.  
1.0  
0.7  
The data of Figure 1 is based on T  
= 150 C. T is vari-  
C
J(pk)  
able depending on conditions. Second breakdown pulse lim-  
its are valid for duty cycles to 10% provided T 150 C.  
T
= 150°C  
J
0.5  
SECOND BREAKDOWN LIMITED  
BONDING WIRE LIMITED  
THERMALLY LIMITED  
J(pk)  
0.3  
0.2  
At high case temperatures, thermal limitations will reduce the  
power that can be handled to values less than the limitations  
imposed by second breakdown. (See AN415A)  
T
= 25°C (D = 0.1)  
C
0.1  
5.0  
7.0  
10  
20  
30  
50 60  
V
, COLLECTOR–EMITTER VOLTAGE (VOLTS)  
CE  
Figure 1. Active–Region Safe Operating Area  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 1  
Motorola, Inc. 1995
1234

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MJE3055TTU 替代型号

型号 品牌 替代类型 描述 数据表
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