生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-CDFM-F2 |
针数: | 2 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.76 |
外壳连接: | SOURCE | 配置: | SINGLE |
最大漏极电流 (Abs) (ID): | 3.75 A | 最大漏极电流 (ID): | 3.75 A |
FET 技术: | JUNCTION | 最高频带: | C BAND |
JESD-30 代码: | R-CDFM-F2 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | DEPLETION MODE |
最高工作温度: | 175 °C | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 功耗环境最大值: | 25 W |
最小功率增益 (Gp): | 9 dB | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | YES |
端子形式: | FLAT | 端子位置: | DUAL |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | GALLIUM ARSENIDE |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MGFC36V5258 | MITSUBISHI |
获取价格 |
5.2 - 5.8GHz BAND 4W INTERNALLY MATCHED GaAs FET | |
MGFC36V5258_04 | MITSUBISHI |
获取价格 |
5.2 - 5.8GHz BAND 4W INTERNALLY MATCHED GaAs FET | |
MGFC36V5258_11 | MITSUBISHI |
获取价格 |
C band internally matched power GaAs FET | |
MGFC36V5867 | MITSUBISHI |
获取价格 |
5.8-6.75GHz BAND 4W INTERNALLY MATCHED GaAs FET | |
MGFC36V5867_11 | MITSUBISHI |
获取价格 |
C band internally matched power GaAs FET | |
MGFC36V5964 | MITSUBISHI |
获取价格 |
Transistor, | |
MGFC36V5964-01 | MITSUBISHI |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction | |
MGFC36V5964-51 | MITSUBISHI |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction | |
MGFC36V5964A | MITSUBISHI |
获取价格 |
5.9 - 6.4GHz BAND 4W INTERNALLY MATCHED GaAs FET | |
MGFC36V5964A_04 | MITSUBISHI |
获取价格 |
5.9 - 6.4GHz BAND 4W INTERNALLY MATCHED GaAs FET |