品牌 | Logo | 应用领域 |
三菱 - MITSUBISHI | / | |
页数 | 文件大小 | 规格书 |
4页 | 198K | |
描述 | ||
SUPER LOW MOISE InGaAs HEMT |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MGF4914D | MITSUBISHI |
获取价格 |
TAPE CARRIER SUPER LOW NOISE INGAAS HEMT | |
MGF4914D-65 | MITSUBISHI |
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RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, H | |
MGF4914E | MITSUBISHI |
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SUPER LOW MOISE InGaAs HEMT | |
MGF4914E-01 | MITSUBISHI |
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RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, H | |
MGF4914E-65 | MITSUBISHI |
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RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, H | |
MGF4916 | MITSUBISHI |
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SUPER LOW NOISE InGaAs HEMT | |
MGF4916D | MITSUBISHI |
获取价格 |
TAPE CARRIER SUPER LOW NOISE INGAAS HEMT | |
MGF4916D-01 | MITSUBISHI |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, H | |
MGF4916F | MITSUBISHI |
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Transistor | |
MGF4916F-65 | MITSUBISHI |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, H |