Datasheet > MGF4916F-65

MGF4916F-65

更新时间： 2024-11-08 04:37:19

品牌	Logo	应用领域
三菱 - MITSUBISHI		/
页数	文件大小	规格书
5页	298K
描述
RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET

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数据手册

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MGF4916F-65 数据手册

MGF431OD Series

L1~o- o ~ i -oqof-

SUPER LOW NOISE InOaAs HEMT

DESCRIPTION

The MGF431OD series super-low-noise HEMT (High

OUTLINE DRAWING Unit millimeters linchesl

Electron Mobility Transistor) is designed for use in X to

K band amplifiers. The hermetically sealed metal-ceramic

package assures minimum parasitic losses, and has a

4MIN.

1.85±0.2

4MIN.

ISiM IN.)(0.073 ± 0.008) (0.1 S7MIN.)

configuration suitable for microstrip circuits.

FEATURES

• Low noise figure @f=12GHz

MGF4314D: NFmin.=1.OOdB (MAX)

MGF4316D: NFmin.=O.8OdB (MAX)

MGF4317D: NFmin.=O.7OdB (MAX)

MGF4318D: NFmin.=O.6OdB (MAX)

• High associated gain Gs=9.5dB(MIN) @f= 12GHz

APPLICATION

X to K band super-low-noise amplifiers.

QUALITY GRADE

• GG

p1.8±0.2

(0.071 ± 0.008)

C’..

o d

+14-I

in in

RECOMMENDED BIAS CONDITIONS

• Vos2V lo~lOmA

• Refer to Bias Procedure

~LFT1

•

in WC%J

—

0 0

+ I 0 0

®GATE

~Zl SOURCE

GD-4

~~RAtN

ABSOLUTE MAXIMUM RATINGS (Ta-25~)

Symbol

V000

Parameter

Gate to drain voltage

Gate to source voltage

Ratings

—4

Unit

V050

—4

Drain cunent

‘C

Total power dissipation

Channel temperature

Storage temperature

Tolt

Tstg

125

—65— + 125

‘C

ELECTRICAL CHARACTERISTICS (Ta=25~

Symbol

Parameter

Test conditions

Umits

Typ

—

Unit

Max

V(BR)000 Gate to drain breakdown voltage lo~ — lOOpA

V(BR)0SO Gatetosourcebraaltdownvoltage 1a 100pA

—

loss

Gate to source leakage current

Vcs= —2V, vos~sov

—

toss

Saturated drain current

Gatato source cut-off voltage

Transconductance

v05=ov, Vos=2V

VOS~2V, lo~5O0pA

Vos=2V, Io=lOmA

1.5

—

VOS(on)

—0.1

Associated gain

9.5

11.5

—

MGF43140

—

0.80

1.00

NFmin

Minimumnoiseflgure

VDS=2V, lo=1OmA. t=12G1-lz

~Vf method

MGF43160

MGF43170

—

0.75

0.65

0.80

0.70

MGF43180

—

0.55

0.60

625

Rth (oh-a) Thermal Resistance

* 1: Channel to ambient

—

C/W

12 3 4 5

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与MGF4916F-65相关器件

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MGF4916G	MITSUBISHI	获取价格	SUPER LOW NOISE InGaAs HEMT
MGF4917D	MITSUBISHI	获取价格	TAPE CARRIER SUPER LOW NOISE INGAAS HEMT
MGF4917D-01	MITSUBISHI	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, H
MGF49180	MITSUBISHI	获取价格	TAPE CARRIER SUPER LOW NOISE INGAAS HEMT
MGF4918D	MITSUBISHI	获取价格	Transistor,
MGF4918D-01	MITSUBISHI	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, H
MGF4918E	MITSUBISHI	获取价格	SUPER LOW MOISE InGaAs HEMT
MGF4918E-01	MITSUBISHI	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, H
MGF4919E	MITSUBISHI	获取价格	SUPER LOW MOISE InGaAs HEMT
MGF4919F	MITSUBISHI	获取价格	Transistor