生命周期: | Obsolete | 包装说明: | DISK BUTTON, O-CRDB-F4 |
Reach Compliance Code: | unknown | HTS代码: | 8541.21.00.95 |
风险等级: | 5.82 | 其他特性: | LOW NOISE |
外壳连接: | SOURCE | 配置: | SINGLE |
最大漏极电流 (ID): | 0.06 A | FET 技术: | HIGH ELECTRON MOBILITY |
最高频带: | K BAND | JESD-30 代码: | O-CRDB-F4 |
元件数量: | 1 | 端子数量: | 4 |
工作模式: | DEPLETION MODE | 最高工作温度: | 125 °C |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装形状: | ROUND |
封装形式: | DISK BUTTON | 极性/信道类型: | N-CHANNEL |
最小功率增益 (Gp): | 7.4 dB | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | FLAT |
端子位置: | RADIAL | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | GALLIUM ARSENIDE | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MGF4919E | MITSUBISHI |
获取价格 |
SUPER LOW MOISE InGaAs HEMT | |
MGF4919F | MITSUBISHI |
获取价格 |
Transistor | |
MGF4919F-01 | MITSUBISHI |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, H | |
MGF4919G | MITSUBISHI |
获取价格 |
SUPER LOW NOISE InGaAs HEMT | |
MGF491XG | MITSUBISHI |
获取价格 |
SUPER LOW NOISE InGaAs HEMT | |
MGF4921AM | MITSUBISHI |
获取价格 |
4pin flat lead package | |
MGF4931AM | MITSUBISHI |
获取价格 |
SUPER LOW NOISE InGaAs HEMT (4pin flat lead package) | |
MGF4934AM | MITSUBISHI |
获取价格 |
SUPER LOW NOISE InGaAs HEMT (4pin flat lead package) | |
MGF4934AM/BM | MITSUBISHI |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, P-Channel, | |
MGF4934AM_07 | MITSUBISHI |
获取价格 |
SUPER LOW NOISE InGaAs HEMT (4pin flat lead package) |