Datasheet > MGF4938AM

MGF4938AM

更新时间： 2024-11-27 19:49:55

品牌	Logo	应用领域
三菱 - MITSUBISHI		/
页数	文件大小	规格书
5页	454K
描述
RF Small Signal Field-Effect Transistor,

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MGF4938AM 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
风险等级：	5.78	Base Number Matches：	1

MGF4938AM 数据手册

< Low Noise GaAs HEMT >

MGF4938AM

4pin flat lead package

DESCRIPTION

The MGF4938AM super-low noise InGaAs HEMT (High Electron Mobility

Transistor) is designed for use in S to Ku band amplifiers.

The 4pin flat lead package is small-thin size, and offers high cost

performance.

Outline Drawing

FEATURES

Very Low noise figure

NFmin. = 0.32dB (Typ.)

High associated gain

Gs = 12.5dB (Typ.)

@ f=12GHz

Fig.1

APPLICATION

S to Ku band low noise amplifiers

QUALITY GRADE

MITSUBISHI Proprietary

Not to be reproduced or disclosed without

permission by Mitsubishi Electric

RECOMMENDED BIAS CONDITIONS

=2V , I =10mA

ORDERING INFORMATION

Tape & reel 15000pcs/reel

RoHS COMPLIANT

MGF4938AM is a RoHS compliant product. RoHS compliance is indicated by the letter “G” after the Lot Marking.

ABSOLUTE MAXIMUM RATINGS

(Ta=25C )

Ratings

Symbol

Parameter

Gate to drain voltage

Gate to source voltage

Drain to source voltage

Drain current

Unit

GDO

GSO

-3

IDSS

C

Total power dissipation

Channel temperature

Storage temperature

Operation temperature

125

stg

-55 to +125

Top

ELECTRICAL CHARACTERISTICS

(Ta=25C )

Test conditions

Symbol

Parameter

Limits

TYP.

Unit

MIN.

-3.5

MAX

V_(BR)GDO

I_GSS

I =-10A

Gate to drain breakdown voltage

Gate to source leakage current

Saturated drain current

A

=-2V,V =0V

I_DSS

=0V,V =2V

V_GS(off)

=2V,I =500A

Gate to source cut-off voltage

Associated gain

-0.1

11.0

-1.5

=2V,

12.5

0.32

I =10mA,f=12GHz

NFmin. Minimum noise figure

0.47

Note: Gs and NFmin. are tested with sampling inspection.

Thermal resistance (Rth) of this product: 800 deg.C/W.

Publication Date :June, 2018

CTHA-180612-04

12 3 4 5

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