Datasheet > MGF4941AL_11

MGF4941AL_11

更新时间： 2024-11-24 12:23:11

品牌	Logo	应用领域
三菱 - MITSUBISHI		/
页数	文件大小	规格书
7页	191K
描述
Micro-X type plastic package

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MGF4941AL_11 数据手册

< Low Noise GaAs HEMT >

MGF4941AL

Micro-X type plastic package

DESCRIPTION

The MGF4941AL super-low noise InGaAs HEMT (High Electron Mobility

Transistor) is designed for use in Ku band amplifiers.

Outline Drawing

FEATURES

Low noise figure

@ f=12GHz

NFmin. = 0.35dB (Typ.)

High associated gain

Gs = 13.5dB (Typ.)

@ f=12GHz

Fig.1

APPLICATION

L to K band low noise amplifiers

MITSUBISHI Proprietary

Not to be reproduced or disclosed without

permission by Mitsubishi Electric

QUALITY GRADE

RECOMMENDED BIAS CONDITIONS

V_DS=2V, I_D=10mA

ORDERRING INFORMATION

Tape & reel

4000pcs./reel

RoHS COMPLIANT

MGF4941AL is a RoHS compliant product. RoHS compliance is indicated by the letter “G” after the Lot Marking.

ABSOLUTE MAXIMUM RATINGS

(Ta=25°C )

Ratings

Symbol

Parameter

Gate to drain voltage

Gate to source voltage

Drain current

Unit

GDO

GSO

-3

IDSS

°C

Total power dissipation

Channel temperature

Storage temperature

125

stg

-55 to +125

ELECTRICAL CHARACTERISTICS

(Ta=25°C )

Test conditions

Symbol

Parameter

Limits

TYP.

Unit

MIN.

-3

MAX

V_(BR)GDO

I_GSS

I =-10ꢀA

Gate to drain breakdown voltage

Gate to source leakage current

Saturated drain current

ꢀA

=-2V,V =0V

I_DSS

=0V,V =2V

V_GS(off)

=2V,I =500ꢀA

Gate to source cut-off voltage

Associated gain

-0.1

12.0

-1.5

=2V,

13.5

0.35

I =10mA,f=12GHz

NFmin. Minimum noise figure

0.5

Note: Gs and NFmin. are tested with sampling inspection.

Publication Date : Apr., 2011

12 3 4 5 6 7

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