Datasheet > MGF65A4H

MGF65A4H

更新时间： 2024-11-08 01:16:27

品牌	Logo	应用领域
三垦 - SANKEN		双极性晶体管
页数	文件大小	规格书
15页	769K
描述
Trench Field Stop IGBTs with Fast Recovery Diode

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中文翻译

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数据手册

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MGF65A4H 数据手册

V_CE= 650 V, I_C= 40 A

Trench Field Stop IGBTs with Fast Recovery Diode

KGF65A4H, MGF65A4H, FGF65A4H

Data Sheet

Description

Package

KGF65A4H, MGF65A4H, and FGF65A4H are 650 V

Field Stop IGBTs. Sanken original trench structure

decreases gate capacitance, and achieves high speed

switching and switching loss reduction. Thus, Field Stop

IGBTs can improve the efficiency of your circuit.

TO247-3L

TO3P-3L

(4)

Features

● Low Saturation Voltage

● High Speed Switching

● With Integrated Fast Recovery Diode

● RoHS Compliant

(1) (2) (3)

TO3PF-3L

● V_CE------------------------------------------------------ 650 V

● I_C(T_C= 100 °C)-----------------------------------------40 A

● Short Circuit Withstand Time ----------------------- 10 μs

● V_CE(sat)-----------------------------------------------1.9 V typ.

● t_f(T_J= 175 °C) ------------------------------------60 ns typ.

● V_F----------------------------------------------------1.8 V typ.

(1) (2) (3)

Applications

● Welding Converters

● PFC Circuit

(2)(4)

(1) Gate

(2) Collector

(3) Emitter

(4) Collector

(1)

(3)

Not to scale

Selection Guide

Part Number

KGF65A4H

MGF65A4H

FGF65A4H

Package

TO247-3L

TO3P-3L

TO3PF-3L

xGF65A4H-DSE Rev.1.4

Oct. 12, 2016

SANKEN ELCTRIC CO., LTD.

http://www.sanken-ele.co.jp/en

12 3 4 5 6 7...15

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