Datasheet > MGF4961B

MGF4961B

更新时间： 2024-09-17 04:16:07

品牌	Logo	应用领域
三菱 - MITSUBISHI		/
页数	文件大小	规格书
4页	111K
描述
SUPER LOW NOISE InGaAs HEMT

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MGF4961B 数据手册

MITSUBISHI SEMICONDUTOR <GaAs FET>

MGF4961B

Feb./2007

SUPER LOW NOISE InGaAs HEMT

DESCRIPTION

The MGF4961B super-low noise HEMT (High Electron Mobility

Transistor) is designed for use in K band amplifiers.

(unit: mm)

Outline Drawing

4.0±0.2

1.9±0.1

(1.05)

FEATURES

Low noise figure

①

@ f=20GHz

NFmin. = 0.7dB (Typ.)

High associated gain

Gs = 13.5dB (Typ.)

@ f=20GHz

②

APPLICATION

C to K band low noise amplifiers

0.5±0.1

③

QUALITY GRADE

① Gate

② Source

③ Drain

GD-31

RECOMMENDED BIAS CONDITIONS

V_DS=2V , I_D=10mA

MITSUBISHI Proprietary

Not to be reproduced or disclosed

ORDERING INFORMATION

without permission by Mitsubishi Electric

Tape & reel 4000pcs./reel

Keep Safety first in your circuit designs!

Mitsubishi Electric Corporation puts the maximum

effort into making semiconductor products better

and more reliable , but there is always the

possibility that trouble may occur with them.

Trouble with semiconductors may lead to personal

injury , fire or property damage. Remember to give

due consideration to safety when making your

circuit designs , with appropriate measure such

as (I) placement of substitutive , auxiliary circuits ,

(ii) use of non-flammable material or (iii) prevention

against any malfunction or mishap.

ABSOLUTE MAXIMUM RATINGS

(Ta=25°C )

Ratings

Symbol

V_GDO

V_GSO

I_D

Parameter

Gate to drain voltage

Gate to source voltage

Drain current

Unit

-4

IDSS

°C

T_ch

T_stg

Total power dissipation

Channel temperature

Storage temperature

125

-55 to +125

°C

ELECTRICAL CHARACTERISTICS

(Ta=25°C )

Test conditions

Synbol

Parameter

Limits

TYP.

Unit

MIN.

-3

MAX

V_(BR)GDO

I_GSS

I_G=-10µA

Gate to drain breakdown voltage

Gate to source leakage current

Saturated drain current

µA

V_GS=-2V,V_DS=0V

V_GS=0V,V_DS=2V

V_DS=2V,I_D=500µA

I_DSS

V_GS(off)

Gate to source cut-off voltage

Associated gain

-0.1

11.5

-1.5

=2V,I =10mA

13.5

0.70

NFmin.

Minimum noise figure

f=20GHz

0.95

MITSUBISHI

(1/4)

12 3 4

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