是否Rohs认证: | 不符合 | 生命周期: | Active |
Reach Compliance Code: | unknown | 风险等级: | 5.69 |
最大漏极电流 (Abs) (ID): | 0.12 A | FET 技术: | METAL SEMICONDUCTOR |
JESD-609代码: | e0 | 最高工作温度: | 150 °C |
极性/信道类型: | N-CHANNEL | 功耗环境最大值: | 0.3 W |
子类别: | Other Transistors | 端子面层: | Tin/Lead (Sn/Pb) |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MGF7006 | MITSUBISHI |
获取价格 |
Wide Band Low Power Amplifier, 200MHz Min, 1800MHz Max, | |
MGF7006-01 | MITSUBISHI |
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RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, H | |
MGF7051A | MITSUBISHI |
获取价格 |
SPDT, 800MHz Min, 2000MHz Max, 1.5dB Insertion Loss-Max | |
MGF7103-01 | MITSUBISHI |
获取价格 |
Narrow Band Medium Power Amplifier, 824MHz Min, 849MHz Max, | |
MGF7104-01 | MITSUBISHI |
获取价格 |
Narrow Band Medium Power Amplifier, 872MHz Min, 905MHz Max, | |
MGF7105-01 | MITSUBISHI |
获取价格 |
Narrow Band Medium Power Amplifier, 890MHz Min, 915MHz Max, | |
MGF7108A | MITSUBISHI |
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Narrow Band Medium Power Amplifier, 898MHz Min, 925MHz Max, GAAS, | |
MGF7109A | MITSUBISHI |
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Narrow Band Medium Power Amplifier, 925MHz Min, 940MHz Max, GAAS, | |
MGF7110C | MITSUBISHI |
获取价格 |
Narrow Band Medium Power Amplifier, 898MHz Min, 925MHz Max, | |
MGF7113C | MITSUBISHI |
获取价格 |
Narrow Band Medium Power Amplifier, 824MHz Min, 849MHz Max, GAAS, |