品牌 | Logo | 应用领域 |
三菱 - MITSUBISHI | / | |
页数 | 文件大小 | 规格书 |
5页 | 233K | |
描述 | ||
Low Noise GaAs HEMT |
生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, S-XQSO-F4 |
Reach Compliance Code: | unknown | HTS代码: | 8541.21.00.95 |
风险等级: | 5.81 | 配置: | SINGLE |
最大漏极电流 (Abs) (ID): | 0.06 A | FET 技术: | HIGH ELECTRON MOBILITY |
最高频带: | K BAND | JESD-30 代码: | S-XQSO-F4 |
元件数量: | 1 | 端子数量: | 4 |
工作模式: | DEPLETION MODE | 最高工作温度: | 125 °C |
封装主体材料: | UNSPECIFIED | 封装形状: | SQUARE |
封装形式: | SMALL OUTLINE | 极性/信道类型: | P-CHANNEL |
功耗环境最大值: | 0.05 W | 最小功率增益 (Gp): | 11 dB |
认证状态: | Not Qualified | 子类别: | FET RF Small Signal |
表面贴装: | YES | 端子形式: | FLAT |
端子位置: | QUAD | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | GALLIUM ARSENIDE | Base Number Matches: | 1 |
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