Datasheet > MGF4953B-70

MGF4953B-70

更新时间： 2024-11-25 05:53:15

品牌	Logo	应用领域
三菱 - MITSUBISHI		/
页数	文件大小	规格书
6页	310K
描述
RF Small Signal Field-Effect Transistor, N-Channel

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MGF4953B-70 数据手册

< Low Noise GaAs HEMT >

MGF4953B

Leadless ceramic package

DESCRIPTION

The MGF4953B super-low noise InGaAs HEMT (High Electron Mobility

Transistor) is designed for use in K band amplifiers.

The lead-less ceramic package assures minimum parasitic losses.

Outline Drawing

FEATURES

Low noise figure

NFmin. = 0.55dB (Typ.)

High associated gain @ f=20GHz

Gs = 10.5dB (Typ.)

@ f=20GHz

Fig.1

APPLICATION

C to K band low noise amplifiers

QUALITY GRADE

MITSUBISHI Proprietary

Not to be reproduced or disclosed without

permission by Mitsubishi Electric

RECOMMENDED BIAS CONDITIONS

=2V , I =10mA

CAUSION!

ORDERING INFORMATION

This device is sensitive to ElectroStatic Discharge (ESD).

Care should be needed during transport and handling.

Tape & reel

10,000pcs/reel (MGF4953B-01)

10,000pcs/reel (MGF4953B-70)

RoHS COMPLIANT

MGF4953B is a RoHS compliant product. RoHS compliance is indicated by the letter “G” after the Lot Marking.

ABSOLUTE MAXIMUM RATINGS

(Ta=25°C )

Ratings

Symbol

Parameter

Gate to drain voltage

Gate to source voltage

Drain to source voltage

Drain current

Unit

GDO

GSO

-3

VDS

°C

Total power dissipation

Channel temperature

Storage temperature

Operation temperature

125

stg

-55 to +125

Top

ELECTRICAL CHARACTERISTICS

(Ta=25°C )

Test conditions

Symbol

Parameter

Limits

TYP.

Unit

MIN.

-3

MAX

V_(BR)GDO

I_GSS

I =-10µA

Gate to drain breakdown voltage

Gate to source leakage current

Saturated drain current

µA

=-2V,V =0V

I_DSS

=0V,V =2V

-0.1

9.0

V_GS(off)

=2V,I =500µA

Gate to source cut-off voltage

Associated gain

-1.5

=2V,

10.5

0.55

I =10mA,f=20GHz

NFmin. Minimum noise figure

0.80

Note: Gs and NFmin. are tested with sampling inspection.

Thermal resistance (Rth) of this product : 580°C/W

Publication Date : Sep., 2013

12 3 4 5 6

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