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MGF4957A

更新时间： 2024-09-17 20:55:59
品牌 Logo 应用领域
三菱 - MITSUBISHI /
页数 文件大小 规格书
5页 133K
描述
RF Small Signal Field-Effect Transistor, N-Channel

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中文翻译

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MGF4957A 技术参数

生命周期：Obsolete包装说明：,
Reach Compliance Code：unknown风险等级：5.84
最大漏极电流 (Abs) (ID)：0.06 A最高工作温度：125 °C
极性/信道类型：N-CHANNEL功耗环境最大值：0.05 W
子类别：FET RF Small SignalBase Number Matches：1

MGF4957A 数据手册

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June/2004  
MITSUBISHI SEMICONDUCTOR <GaAs FET>  
MGF4957A  
SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package)  
DESCRIPTION  
The MGF4957A super-low noise HEMT (High Electron Mobility  
Transistor) is designed for use in C to K band amplifiers.  
Outline Drawing  
The lead-less ceramic package assures minimum parasitic losses.  
FEATURES  
Low noise figure  
@ f=12GHz  
MGF4957A : NFmin. = 0.40dB (Typ.)  
Fig.1  
High associated gain  
Gs = 13.0dB (Typ.)  
@ f=12GHz  
MITSUBISHI Proprietary  
APPLICATION  
C to K band low noise amplifiers  
Not to be reproduced or disclosed  
without permission by Mitsubishi Electric  
QUALITY GRADE  
GG  
RECOMMENDED BIAS CONDITIONS  
VDS=2V , ID=7.5mA  
ORDERING INFORMATION  
Tape & reel 3000pcs./reel  
Keep Safety first in your circuit designs!  
Mitsubishi Electric Corporation puts the maximum  
effort into making semiconductor products better  
and more reliable , but there is always the  
possibility that trouble may occur with them.  
Trouble with semiconductors may lead to personal  
injury , fire or property damage. Remember to give  
due consideration to safety when making your  
circuit designs , with appropriate measure such  
as (I) placement of substitutive , auxiliary circuits ,  
(ii) use of non-flammable material or (iii) prevention  
against any malfunction or mishap.  
ABSOLUTE MAXIMUM RATINGS  
(Ta=25°C )  
Ratings  
Symbol  
VGDO  
VGSO  
ID  
Parameter  
Gate to drain voltage  
Gate to source voltage  
Drain current  
Unit  
V
-4  
-4  
60  
V
mA  
mW  
°C  
PT  
Tch  
Tstg  
Total power dissipation  
Channel temperature  
Storage temperature  
50  
125  
-65 to +125  
°C  
ELECTRICAL CHARACTERISTICS  
(Ta=25°C )  
Test conditions  
Synbol  
Parameter  
Limits  
TYP.  
--  
Unit  
MIN.  
-3  
MAX  
--  
V(BR)GDO  
IGSS  
IG=-10µA  
Gate to drain breakdown voltage  
Gate to source leakage current  
Saturated drain current  
V
µA  
mA  
V
VGS=-2V,VDS=0V  
VGS=0V,VDS=2V  
VDS=2V,ID=500µA  
--  
--  
50  
IDSS  
15  
--  
60  
VGS(off)  
Gs  
Gate to source cut-off voltage  
Associated gain  
-0.1  
12.0  
--  
--  
-1.5  
--  
V
=2V, ID=7.5mA  
DS  
13.0  
0.40  
dB  
dB  
NFmin.  
Minimum noise figure  
f=12GHz  
0.50  
MITSUBISHI  
June/2004  
(1/5)  
12345

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