品牌 | Logo | 应用领域 |
三菱 - MITSUBISHI | / | |
页数 | 文件大小 | 规格书 |
10页 | 579K | |
描述 | ||
TAPE CARRIER SUPER LOW NOISE INGAAS HEMT |
生命周期: | Obsolete | 包装说明: | , |
Reach Compliance Code: | unknown | 风险等级: | 5.84 |
最大漏极电流 (Abs) (ID): | 0.06 A | FET 技术: | METAL SEMICONDUCTOR |
最高工作温度: | 125 °C | 极性/信道类型: | N-CHANNEL |
功耗环境最大值: | 0.05 W | 子类别: | Other Transistors |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MGF4917D-01 | MITSUBISHI |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, H | |
MGF49180 | MITSUBISHI |
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TAPE CARRIER SUPER LOW NOISE INGAAS HEMT | |
MGF4918D | MITSUBISHI |
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Transistor, | |
MGF4918D-01 | MITSUBISHI |
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RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, H | |
MGF4918E | MITSUBISHI |
获取价格 |
SUPER LOW MOISE InGaAs HEMT | |
MGF4918E-01 | MITSUBISHI |
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RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, H | |
MGF4919E | MITSUBISHI |
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SUPER LOW MOISE InGaAs HEMT | |
MGF4919F | MITSUBISHI |
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Transistor | |
MGF4919F-01 | MITSUBISHI |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, H | |
MGF4919G | MITSUBISHI |
获取价格 |
SUPER LOW NOISE InGaAs HEMT |