MGF4916

更新时间： 2024-09-16 22:01:07

品牌	Logo	应用领域
三菱 - MITSUBISHI		/
页数	文件大小	规格书
3页	22K
描述
SUPER LOW NOISE InGaAs HEMT

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数据手册

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MGF4916 数据手册

MITSUBISHI SEMICONDUCTOR GaAs FET

MGF491xG Series

SUPER LOW NOISE InGaAs HEMT

DESCRIPTION

The MGF491xG series super-low-noise HEMT(High Electron

OUTLINE DRAWING

Unit:millimeters

Mobility Transistor) is designed for use in L to Ku band amplifiers.

The hermetically sealed metal-ceramic package assures

minimumu parasitic losses, and has a configuration suitable for

microstrip circuits.

4.0±0.2

1.85±0.2

The MGF491*G series is mounted in the super 12 tape.

0.5±0.15

FEATURES

• Low noise figure

@f=12GHz

MGF4916G:NFmin.=0.80dB(MAX.)

MGF4919G:NFmin.=0.50dB(MAX.)

• High associated gain @f=12GHz

Gs=12.0dB(MIN.)

0.5±0.15

ø1.8±0.2

APPLICATION

L to Ku band low noise amplifiers.

QUALITY GRADE

• GG

GATE

SOURCE

DRAIN

RECOMMENDED BIAS CONDITIONS

• VDS=2V,ID=10mA

• Refer to Bias Procedure

GD-16

ABSOLUTE MAXIMUM RATINGS (Ta=25˚C)

Symbol

Parameter

Ratings

Unit

VGDO

Gate to drain voltage

Gate to source voltage

Drain current

-4

VGSO

˚C

Total power dissipation

Channel temperature

Storage temperature

Tch

Tstg

125

-65 to +125

˚C

ELECTRICAL CHARACTERISTICS (Ta=25˚C)

Limits

Symbol

Parameter

Test conditions

Unit

Min

-3

Typ

–

Max

–

IG=-10µA

V(BR)GDO Gate to drain breakdown voltage

µA

Gate to source leakage current

IGSS

–

VGS=-2V,VDS=0V

VGS=0V,VDS=2V

VDS=2V,ID=500µA

VDS=2V,ID=10mA

-1.5

–

IDSS

VGs(off)

Saturated drain current

Gate to source cut-off voltage

–

-0.1

–

13.5

Transconductance

Associated gain

12.0

–

VDS=2V,ID=10mA

f=12GHz

MGF4916G

MGF4919G

0.80

0.50

–

NFmin.

Minimum noise figure

Nov. ´97

12 3

中文翻译

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