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MGDT100100-SM PDF预览

MGDT100100-SM

更新时间： 2024-10-15 22:59:27
品牌 Logo 应用领域
威世 - VISHAY 变压器局域网
页数 文件大小 规格书
3页 97K
描述
PLANAR GATE-DRIVE XFMR, 1 : 1 :

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中文翻译

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MGDT100100-SM 技术参数

生命周期：ActiveReach Compliance Code：unknown
风险等级：2.02变压器类型：PULSE TRANSFORMER
Base Number Matches：1

MGDT100100-SM 数据手册

 浏览型号MGDT100100-SM的Datasheet PDF文件第2页浏览型号MGDT100100-SM的Datasheet PDF文件第3页 
MGDT Series  
Vishay Custom Magnetics  
www.vishay.com  
Miniaturized Gate Drive Planar Transformers  
FEATURES  
Available  
• Deliver MOSFET / IGBT gate power and timing  
signals simultaneously  
• Directly drive high side MOSFETs / IGBTs on busses up  
to 1200 V  
• Excellent rise time, overshoot, and peak current  
characteristics  
• 8 mm minimum creepage and clearance from drive to  
gates  
• Low profile planar package  
• LF and SM versions are RoHS-compliant  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
ABSOLUTE MAXIMUM RATINGS  
Note  
*
This datasheet provides information about parts that are  
RoHS-compliant and / or parts that are non RoHS-compliant. For  
example, parts with lead (Pb) terminations are not RoHS-compliant.  
Please see the information / tables in this datasheet for details  
PARAMETER CONDITIONS  
LIMITS  
UNITS  
Drive to gate,  
3750  
VAC  
Dielectric  
1 min  
withstand  
Gate to gate,  
voltage  
2500  
2.0  
VAC  
W
1 min  
Total power  
TA = 25 °C  
dissipation (1)  
Operating  
Continuous  
temperature (2)  
-55 to +125  
°C  
Storage  
Continuous  
temperature  
-55 to +130  
100 to 500  
°C  
Frequency  
kHz  
mm  
Size  
(L x W x H)  
20.57 x 18.42 x 11.43  
Terminals  
Through-hole and surface-mount  
Note  
(1)  
Derate at 33.3 mW/ºC above 25 ºC  
Derate drive level to 60 V/μs above 85°C  
(2)  
STANDARD ELECTRICAL SPECIFICATIONS  
DC  
INTERWINDING  
RESISTANCE (2) CAPACITANCE  
USEFUL  
FREQ.  
RANGE  
(kHz)  
DRIVE  
MAGNETIZING  
LEAKAGE  
TRANSFER  
RATIO  
DRIVE GATE  
EXCITATION INDUCTANCE INDUCTANCE  
PART NUMBER  
DRIVE GATES  
TO  
TO  
MAX.  
(Vμs)  
MIN.  
MAX.  
(
ꢀ ꢁ) (1)  
MAX.  
MAX.  
GATE  
MAX.  
(pF)  
GATE  
MAX.  
(pF)  
(μH) (2)(ꢀ)  
(μH) (4)  
()  
()  
MGDT100100  
100 to 500  
100 to 500  
1 : 1 : 1  
1 : 1 : 1  
1 : 1 : 1  
80  
80  
80  
80  
80  
80  
240  
240  
240  
240  
240  
240  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.35  
0.35  
0.35  
0.35  
0.35  
0.35  
0.35  
0.35  
0.35  
0.50  
0.50  
0.50  
15  
15  
15  
25  
25  
25  
10  
10  
10  
10  
10  
10  
MGDT100100LF  
MGDT100100-SM 100 to 500  
MGDT100125  
100 to 500 1 : 1.25 : 1.25  
100 to 500 1 : 1.25 : 1.25  
MGDT100125LF  
MGDT100125-SM 100 to 500 1 : 1.25 : 1.25  
Notes  
(1)  
Drive : gate : gate  
TA = 25 °C  
100 mV at 100 kHz across the drive winding with all gates open  
100 mA at 100 kHz into the drive winding with all gates shorted  
(2)  
(3)  
(4)  
Revision: 07-Sep-2018  
Document Number: 34454  
1
For technical questions, contact: magnetics@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
123

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