是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 包装说明: | FLANGE MOUNT, R-XUFM-X5 |
针数: | 5 | Reach Compliance Code: | unknown |
风险等级: | 5.23 | Is Samacsys: | N |
其他特性: | HIGH SPEED | 外壳连接: | ISOLATED |
最大集电极电流 (IC): | 50 A | 集电极-发射极最大电压: | 600 V |
配置: | SINGLE WITH BUILT-IN DIODE | 最大降落时间(tf): | 350 ns |
门极发射器阈值电压最大值: | 6 V | 门极-发射极最大电压: | 20 V |
JESD-30 代码: | R-XUFM-X5 | 元件数量: | 1 |
端子数量: | 5 | 最高工作温度: | 150 °C |
封装主体材料: | UNSPECIFIED | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 功耗环境最大值: | 250 W |
最大功率耗散 (Abs): | 250 W | 认证状态: | Not Qualified |
最大上升时间(tr): | 600 ns | 子类别: | Insulated Gate BIP Transistors |
表面贴装: | NO | 端子形式: | UNSPECIFIED |
端子位置: | UPPER | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | MOTOR CONTROL | 晶体管元件材料: | SILICON |
标称断开时间 (toff): | 780 ns | 标称接通时间 (ton): | 700 ns |
VCEsat-Max: | 3.5 V | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MG50J2YS40 | TOSHIBA |
获取价格 |
TRANSISTOR 50 A, 600 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor |
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MG50J2YS45 | TOSHIBA |
获取价格 |
TRANSISTOR 50 A, 600 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor |
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MG50J2YS50 | TOSHIBA |
获取价格 |
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) |
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MG50J2YS9 | TOSHIBA |
获取价格 |
TRANSISTOR 50 A, 600 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor |
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MG50J2YS91 | TOSHIBA |
获取价格 |
TRANSISTOR 50 A, 600 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor |
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MG50J6EL1 | TOSHIBA |
获取价格 |
TRANSISTOR 50 A, 600 V, 6 CHANNEL, NPN, Si, POWER TRANSISTOR, 2-94E1A, 11 PIN, BIP General |
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MG50J6ES11 | TOSHIBA |
获取价格 |
TRANSISTOR 50 A, 600 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor |
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MG50J6ES40 | TOSHIBA |
获取价格 |
TRANSISTOR 50 A, 600 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor |
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MG50J6ES45 | TOSHIBA |
获取价格 |
TRANSISTOR 50 A, 600 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor |
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MG50J6ES50 | TOSHIBA |
获取价格 |
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) |
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