5秒后页面跳转
MG50P12E1A PDF预览

MG50P12E1A

更新时间: 2024-03-03 10:10:19
品牌 Logo 应用领域
扬杰 - YANGJIE /
页数 文件大小 规格书
12页 455K
描述
E1A

MG50P12E1A 数据手册

 浏览型号MG50P12E1A的Datasheet PDF文件第2页浏览型号MG50P12E1A的Datasheet PDF文件第3页浏览型号MG50P12E1A的Datasheet PDF文件第4页浏览型号MG50P12E1A的Datasheet PDF文件第5页浏览型号MG50P12E1A的Datasheet PDF文件第6页浏览型号MG50P12E1A的Datasheet PDF文件第7页 
RoHS  
MG50P12E1A  
COMPLIANT  
IGBT Modules  
VCES  
IC  
1200V  
50A  
Applications  
·Motor Drivers  
·AC and DC servo drive amplifier  
·UPS (Uninterruptible Power Supplies)  
Features  
Circuit  
·Low switching losses  
·Low vce(sat) with positive temperature coefficient  
·Including fast & soft recovery anti-parallel FWD  
·Low inductance case  
·High short circuit capability(10us)  
·Maximum junction temperature 175  
IGBT- inverter  
Absolute Maximum Ratings  
Symbol  
Conditions  
Value  
Unit  
Parameter  
Collector-Emitter Voltage  
Continuous Collector Current  
Repetitive Peak Collector Current  
Gate-Emitter Voltage  
VCES  
IC  
ICRM  
VGES  
VGE=0V, IC =1mA, Tvj=25℃  
Tc=100℃,Tvjmax=175℃  
tp=1ms  
1200  
50  
V
A
A
V
100  
Tvj=25℃  
Tc=25℃  
±20  
Total Power Dissipation  
Ptot  
288  
W
T
vjmax=175℃  
S-M355  
www.21yangjie.com  
Rev.1.3, 3-Feb-23  
1

与MG50P12E1A相关器件

型号 品牌 获取价格 描述 数据表
MG50P12E2 YANGJIE

获取价格

E2
MG50P12E2A YANGJIE

获取价格

E2A
MG50Q1BS1 TOSHIBA

获取价格

TRANSISTOR 50 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor
MG50Q1BS11 TOSHIBA

获取价格

N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
MG50Q1ZS50 TOSHIBA

获取价格

N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
MG50Q2YK1 IXYS

获取价格

Power Bipolar Transistor, 50A I(C), 1-Element,
MG50Q2YK9 TOSHIBA

获取价格

TRANSISTOR 50 A, 1200 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power
MG50Q2YL1 ETC

获取价格

TRANSISTOR MODULES
MG50Q2YS40 TOSHIBA

获取价格

N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
MG50Q2YS50 TOSHIBA

获取价格

N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)