生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-PUFM-X19 |
Reach Compliance Code: | unknown | 风险等级: | 5.82 |
其他特性: | HIGH SPEED | 最大集电极电流 (IC): | 50 A |
集电极-发射极最大电压: | 600 V | 配置: | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
最大降落时间(tf): | 350 ns | JESD-30 代码: | R-PUFM-X19 |
元件数量: | 6 | 端子数量: | 19 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | UNSPECIFIED | 端子位置: | UPPER |
晶体管应用: | POWER CONTROL | 晶体管元件材料: | SILICON |
VCEsat-Max: | 3.5 V | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MG50J6ES45 | TOSHIBA |
获取价格 |
TRANSISTOR 50 A, 600 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor | |
MG50J6ES50 | TOSHIBA |
获取价格 |
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) | |
MG50J6ES91 | TOSHIBA |
获取价格 |
TRANSISTOR 50 A, 600 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor | |
MG50M1BK1 | TOSHIBA |
获取价格 |
TRANSISTOR 50 A, 880 V, NPN, Si, POWER TRANSISTOR, 2-33D1A, 3 PIN, BIP General Purpose Pow | |
MG50M2CK2 | TOSHIBA |
获取价格 |
TRANSISTOR 50 A, 880 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR, 2-68B1A, 5 PIN, BIP General | |
MG50M2YK1 | TOSHIBA |
获取价格 |
Silicon NPN Triple Diffused Type(High Power Switching, Motor Control Applications) | |
MG50M2YK1 | IXYS |
获取价格 |
Power Bipolar Transistor, 50A I(C), 1-Element, | |
MG50M2YK9 | TOSHIBA |
获取价格 |
TRANSISTOR 50 A, 880 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR, 2-94D1A, 7 PIN, BIP General | |
MG50M2YL1 | ETC |
获取价格 |
TRANSISTOR MODULES | |
MG50N1BS1 | TOSHIBA |
获取价格 |
TRANSISTOR 50 A, 1000 V, N-CHANNEL IGBT, 2-33D1A, 3 PIN, Insulated Gate BIP Transistor |