Datasheet > MG50P12E2

MG50P12E2

更新时间： 2024-09-24 15:18:47

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
12页	1044K
描述
E2

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中文翻译

获取价格

数据手册

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MG50P12E2 数据手册

RoHS

COMPLIANT

MG50P12E2

IGBT Modules

VCES

1200V

50A

Applications



Motor Drivers

AC and DC servo drive amplifier

UPS (Uninterruptible Power Supplies)

Circuit

Features



Low V_ce(sat)with Planner technology

Low v_ce(sat)with positive temperature coefficient

Including fast & soft recovery anti-parallel FWD

Low inductance case

High short circuit capability(10us)

Maximum junction temperature 175℃

 IGBT- inverter

Absolute Maximum Ratings

Symbol

Conditions

Value

Unit

Parameter

Collector-Emitter Voltage

V_CES

I_C

1200

V_GE=0V, I_C=1mA, T_vj=25℃

T_c=80℃, T_vjmax=150℃

Continuous Collector Current

Repetitive Peak Collector

Current

I_CRM

tp=1ms

100

Gate-Emitter Voltage

V_GES

P_tot

±20

368

T_vj=25℃

Total Power Dissipation

T_c=25℃,T_vjmax=150℃

S-M360

Rev.1.0,1-Jun-20

www.21yangjie.com

12 3 4 5 6 7...12

中文翻译

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与MG50P12E2相关器件

型号	品牌	获取价格	描述	数据表
MG50P12E2A	YANGJIE	获取价格	E2A
MG50Q1BS1	TOSHIBA	获取价格	TRANSISTOR 50 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor
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MG50Q1ZS50	TOSHIBA	获取价格	N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
MG50Q2YK1	IXYS	获取价格	Power Bipolar Transistor, 50A I(C), 1-Element,
MG50Q2YK9	TOSHIBA	获取价格	TRANSISTOR 50 A, 1200 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power
MG50Q2YL1	ETC	获取价格	TRANSISTOR MODULES
MG50Q2YS40	TOSHIBA	获取价格	N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
MG50Q2YS50	TOSHIBA	获取价格	N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
MG50Q2YS50A	TOSHIBA	获取价格	N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)