Datasheet > MG150HF12LEC2

MG150HF12LEC2

更新时间： 2024-11-12 17:01:11

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
8页	854K
描述
C2

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中文翻译

获取价格

数据手册

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MG150HF12LEC2 数据手册

RoHS

COMPLIANT

MG150HF12LEC2

IGBT Modules

V_CES

I_C

1200V

150A

Applications

·High frequency drivers

·Solar inverters

·UPS (Uninterruptible Power Supplies)

·Electric welding machine

Circuit

Features

·High speed IGBT in NPT technology

·Low switching losses

·High short circuit capability(10us)

·Including ultra fast & soft recovery anti-parallel FWD

·Low inductance

·Maximum junction temperature 150℃

 IGBT

Absolute Maximum Ratings

Symbol

Conditions

Value

Unit

Parameter

Collector-Emitter Voltage

Continuous Collector Current

Repetitive Peak Collector Current

Gate-Emitter Voltage

V_CES

I_C

I_CRM

V_GES

V_GE=0V, I_C=1mA, T_vj=25℃

T_c=80℃

1200

150

tp=1ms

300

T_vj=25℃

±20

T_c=25℃

Total Power Dissipation

P_tot

1136

T_vjmax=150℃

S-M338

www.21yangjie.com

Rev.1.3,8-Apr-22

12 3 4 5 6 7 8

中文翻译

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