生命周期: | Obsolete | 零件包装代码: | MODULE |
包装说明: | FLANGE MOUNT, R-XUFM-X26 | 针数: | 26 |
Reach Compliance Code: | unknown | 风险等级: | 5.83 |
Is Samacsys: | N | 外壳连接: | ISOLATED |
最大集电极电流 (IC): | 150 A | 集电极-发射极最大电压: | 600 V |
配置: | COMPLEX | 门极-发射极最大电压: | 20 V |
JESD-30 代码: | R-XUFM-X26 | 元件数量: | 7 |
端子数量: | 26 | 最高工作温度: | 150 °C |
封装主体材料: | UNSPECIFIED | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 子类别: | Insulated Gate BIP Transistors |
表面贴装: | NO | 端子形式: | UNSPECIFIED |
端子位置: | UPPER | 晶体管应用: | POWER CONTROL |
晶体管元件材料: | SILICON | VCEsat-Max: | 2.3 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MG150M2CK1 | TOSHIBA |
获取价格 |
TRANSISTOR 150 A, 880 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR, 2-80C1A, 9 PIN, BIP General | |
MG150M2CK2 | TOSHIBA |
获取价格 |
MG150M2CK2 | |
MG150M2YK1 | ETC |
获取价格 |
TRANSISTOR MODULES | |
MG150M2YK2 | TOSHIBA |
获取价格 |
TRANSISTOR 150 A, 880 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR, 2-109B3A, 9 PIN, BIP Genera | |
MG150M2YL1 | ETC |
获取价格 |
TRANSISTOR MODULES | |
MG150N2YK1 | ETC |
获取价格 |
TRANSISTOR MODULES | |
MG150N2YL1 | ETC |
获取价格 |
TRANSISTOR MODULES | |
MG150N2YS1 | TOSHIBA |
获取价格 |
TRANSISTOR 150 A, 1000 V, N-CHANNEL IGBT, 2-109B4A, 7 PIN, Insulated Gate BIP Transistor | |
MG150N2YS40 | TOSHIBA |
获取价格 |
TRANSISTOR 150 A, 1000 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor | |
MG150P12E2 | YANGJIE |
获取价格 |
E2 |