生命周期: | Obsolete | 包装说明: | , |
Reach Compliance Code: | unknown | 风险等级: | 5.84 |
最大集电极电流 (IC): | 150 A | 集电极-发射极最大电压: | 600 V |
配置: | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | 元件数量: | 2 |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MG150J2YS40 | TOSHIBA |
获取价格 |
TRANSISTOR 150 A, 600 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor | |
MG150J2YS50 | TOSHIBA |
获取价格 |
N CHANNEL IGBT (HIGH PWER SWITCHING, MOTOR CONTROL APPLICATIONS) | |
MG150J7KS50 | TOSHIBA |
获取价格 |
TOSHIBA GTR Module Silicon N Channel IGBT | |
MG150J7KS60 | TOSHIBA |
获取价格 |
TOSHIBA GTR MODULE SILICON N CHANNEL IGBT | |
MG150J7KS61 | MITSUBISHI |
获取价格 |
High Power Switching Applications Motor Control Applications | |
MG150M2CK1 | TOSHIBA |
获取价格 |
TRANSISTOR 150 A, 880 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR, 2-80C1A, 9 PIN, BIP General | |
MG150M2CK2 | TOSHIBA |
获取价格 |
MG150M2CK2 | |
MG150M2YK1 | ETC |
获取价格 |
TRANSISTOR MODULES | |
MG150M2YK2 | TOSHIBA |
获取价格 |
TRANSISTOR 150 A, 880 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR, 2-109B3A, 9 PIN, BIP Genera | |
MG150M2YL1 | ETC |
获取价格 |
TRANSISTOR MODULES |