Datasheet > MG150HF12MRC2

MG150HF12MRC2

更新时间： 2024-09-24 15:19:39

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
5页	322K
描述
C2

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MG150HF12MRC2 数据手册

MG150HF12MRC2 _C^R_OM^o_P^H_LIA^S_NT

IGBT Modules

VCES

1200V

150A

Applications



Industrial Inverters

Servo Applications

SMPS UPS

Induction Heating

Circuit

Features

 Short Circuit Rated 10μs

 Low Stray Inductance

Low Saturation Voltage



 Ultra Low loss

 HI-REL Power Terminals

 Lead Free, Compliant With RoHS Requirement

Absolute Maximum Ratings（T_C= 25℃ unless otherwise specified）

Symbol

V_CES

Description

Values

1200

±20

Units

Collector - Emitter Voltage

Gate-Emitter Voltage

V_GES

T_C=25℃

210

I_C

DC Collector Current

Pulsed Collector Current

T_C=80℃

150

TC=25°C, tp=1ms

TC=80°C, tp=1ms

420

I_C

puls

300

Ptot

Ptot Power Dissipation Per IGBT

880

Junction Temperature Range

Storage Temperature Range

Insulation Test Voltage

40 to +150

40 to +125

3000

°C

T_J

TSTG

Viso

AC, t=1min

Power Terminals Screw: M6

Mounting Screw:M6

5±15%

N*m

Mounting Torque

Notes :

(1) Repetitive Rating: Pulse width limited by max. junction temperature

S-M111

Rev.1.0,27-Nov-19

www.21yangjie.com

12 3 4 5

中文翻译

下载PDF

与MG150HF12MRC2相关器件

型号	品牌	获取价格	描述	数据表
MG150HF12TFC1	YANGJIE	获取价格	C1
MG150HF12TFC2	YANGJIE	获取价格	C2
MG150HF12TLC1	YANGJIE	获取价格	C1
MG150HF12TLC2	YANGJIE	获取价格	C2
MG150J1BS11	TOSHIBA	获取价格	N CHANNEL IGBT (HIGH PWER SWITCHING, MOTOR CONTROL APPLICATIONS)
MG150J1JS50	TOSHIBA	获取价格	high power switching applications
MG150J1ZS50	TOSHIBA	获取价格	Silicon N Channel IGBT
MG150J2YS1	TOSHIBA	获取价格	TRANSISTOR 150 A, 600 V, N-CHANNEL IGBT, 2-96A4A, 7 PIN, Insulated Gate BIP Transistor
MG150J2YS11	TOSHIBA	获取价格	TRANSISTOR 150 A, 600 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor
MG150J2YS21	TOSHIBA	获取价格	TRANSISTOR 150 A, 600 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor